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CSD88537ND Datasheet, PDF (1/13 Pages) Texas Instruments – CSD88537ND, Dual 60 V N-Channel NexFET Power MOSFETs
CSD88537ND
www.ti.com
SLPS455 – JANUARY 2014
CSD88537ND, Dual 60 V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD88537ND
FEATURES
1
•2 Ultra-Low Qg and Qgd
• Avalanche Rated
• Pb Free
• RoHS Compliant
• Halogen Free
APPLICATIONS
• Half Bridge for Motor Control
• Synchronous Buck Converter
DESCRIPTION
This dual SO-8, 60 V, 12.5 mΩ NexFET™ power
MOSFET is designed to serve as a half bridge in low
current motor control applications.
Top View
1
S1
2
G1
3
S2
4
G2
8
D1
7
D1
6
D2
5
D2
.
RDS(on) vs VGS
30
27
TC = 25°C,I D = 8A
TC = 125°C,I D = 8A
24
21
18
15
12
9
6
3
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage (V)
G001
PRODUCT SUMMARY
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (10 V)
Qgd
Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
60
14
2.3
VGS = 6 V
VGS = 10 V
3.0
15.0
12.5
UNIT
V
nC
nC
mΩ
mΩ
V
ORDERING INFORMATION
Device
Qty
Media
Package
CSD88537ND
CSD88537NDT
2500
250
13-Inch Reel
7-Inch Reel
SO-8 Plastic
Package
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Continuous Drain Current (Package limited)
VALUE
60
±20
15
UNIT
V
V
ID
Continuous Drain Current (Silicon limited),
TC = 25°C
16
A
Continuous Drain Current (1)
8.0
IDM Pulsed Drain Current, TA = 25°C(2)
PD
Power Dissipation(1)
62
A
2.1
W
TJ, Operating Junction and
TSTG Storage Temperature Range
–55 to 150 °C
EAS
Avalanche Energy, single pulse
ID = 32, L = 0.1 mH, RG = 25 Ω
51
mJ
(1) Typical RθJA = 60°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06-
inch thick FR4 PCB.
(2) Pulse duration ≤ 300 μs, duty cycle ≤ 2%
.
GATE CHARGE
10
9
ID = 8A
VDS = 30V
8
7
6
5
4
3
2
1
0
0
3
6
9
12
15
Qg - Gate Charge (nC)
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2014, Texas Instruments Incorporated
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