CSD87503Q3E Datasheet, PDF (1/12 Pages) Texas Instruments – 30-V N-Channel NexFET Power MOSFETs

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CSD87503Q3E
SLPS661 – SEPTEMBER 2017
CSD87503Q3E 30-V N-Channel NexFET™ Power MOSFETs
1 Features
•1 Dual N-Ch Common Source MOSFETs
• Optimized for 5-V Gate Drive
• Low-Thermal Resistance
• Low Q_g and Q_gd
• Lead-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 3.3-mm × 3.3-mm Plastic Package
2 Applications
• USB Type-C/PD VBus Protection
• Battery Protection
• Load Switch
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (4.5 V)
Q_gd
Gate Charge Gate-to-Drain
R_DD(on) Drain-to-Drain On-Resistance
V_GS(th) Threshold Voltage
VALUE
30
13.4
5.8
V_GS = 4.5 V
V_GS = 10 V
1.7
17.3
13.5
UNIT
V
nC
nC
mΩ
V
Device Information⁽¹⁾
DEVICE
QTY
MEDIA
PACKAGE
CSD87503Q3E 2500 13-Inch Reel
CSD87503Q3ET 250 7-Inch Reel
SON
3.30-mm × 3.30-mm
Plastic Package
SHIP
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
3 Description
The CSD87503Q3E is a 30-V, 13.5-mΩ, common
source, dual N-channel device designed for USB
Type-C/PD and battery protection. This SON 3.3 ×
3.3 mm device has low drain-to-drain on-resistance
that minimizes losses and offers low component
count for space constrained applications.
Top View
Absolute Maximum Ratings
T_A = 25°C
V_DS
Drain-to-Source Voltage
V_GS
Gate-to-Source Voltage
I_{D1, D2}
Continuous Drain-to-Drain Current
(Package Limited)
VALUE
30
±20
10
UNIT
V
V
A
I_DS
I_{D1, D2M}
P_D
P_D
T_J ,
T_stg
Continuous Drain-to-Source Current
(Package Limited)
Pulsed Drain-to-Drain Current,⁽¹⁾
Power Dissipation⁽²⁾
Power Dissipation, T_C = 25°C
Operating Junction,
Storage Temperature
1.5
A
89
A
2.6
W
15.6
W
–55 to 150 °C
(1) Max R_θJC = 8°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.
(2) Typical R_θJA = 50°C/W when mounted on a 1-in² (6.45-cm²),
2-oz (0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick
FR4 PCB.
Circuit Image
Gate 1
PIN 1
Gate 2
PIN 3
Drain 1
Pins 7, 8
Common Common
Source Source
Pin 2 Pin 4
Drain 2
Pins 5, 6
R_DD(on) vs V_GS
40
T_C = 25°C, I _D1D2 = 6 A
35
T_C = 125°C, I _D1D2 = 6 A
30
25
20
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
V_G1, V_G2 - Gate Voltage (V)
D007
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.