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CSD87313DMS Datasheet, PDF (1/16 Pages) Texas Instruments – 30-V Dual N-Channel NexFET Power MOSFETs
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CSD87313DMS
SLPS642 – APRIL 2017
CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs
1 Features
•1 Low-Source-to-Source On Resistance
• Dual Common Drain N-Channel MOSFETs
• Optimized for 5-V Gate Drive
• Low Qg and Qgd
• Low-Thermal Resistance
• Avalanche Rated
• Lead-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 3.3-mm × 3.3-mm Plastic Package
2 Applications
• USB Type-C™ and Power Delivery (PD) VBus
Protection
• Battery Protection
• Load Switch
3 Description
The CSD87313DMS is a 30-V common drain, dual N-
channel device designed for USB Type-C/PD and
battery protection. This SON 3.3-mm × 3.3-mm
device has low-source-to-source on resistance that
minimizes losses and offers low-component count for
space constrained applications.
Schematic
S1
G1
D
Product Summary
TA = 25°C
VS1S2
Source1-to-Source2 Voltage
Qg
Gate Charge Total (4.5 V)
Qgd
Gate Charge Gate-to-Drain
RS1S2(on)
Max Source1-to-Source2 On
Resistance
VGS(th) Threshold Voltage
VALUE
30
28
6.0
VGS = 2.5 V 9.6
VGS = 4.5 V 5.5
0.9
UNIT
V
nC
nC
mΩ
V
Device Information(1)
DEVICE
QTY MEDIA
PACKAGE
CSD87313DMS 2500 13-Inch Reel
CSD87313DMST 250 7-Inch Reel
SON
3.30-mm × 3.30-mm
Plastic Package
SHIP
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C unless otherwise stated
VS1S2 Source1-to-Source2 Voltage
VGS Gate-to-Source Voltage(1)
IS1S2 Continuous Source Current(2)
ISM Pulsed Source Current, TA = 25°C(2)(3)
Power Dissipation(2)
PD
Power Dissipation(4)
VALUE
30
±10
17
120
2.7
1
UNIT
V
V
A
A
W
TJ, Operating Junction,
Tstg Storage Temperature
EAS
Avalanche Energy, Single Pulse,
ID = 37 A, L = 0.1 mH, RG = 25 Ω
–55 to 150 °C
67
mJ
(1) VG1S1 should not exceed ±10 V and VG2S2 should not exceed
±10 V.
(2) Typical RθJA = 45°C/W when mounted on a 1-in2 (6.45-cm2),
2-oz (0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick
FR4 PCB.
(3) Duty cycle ≤ 2%, pulse duration ≤ 300 µs.
(4) Typical RθJA = 125°C/W on a minimum 2-oz Cu pad.
G2
S2
RS1S2(ON) vs VGS
20
18
TC = 25°C, I D = 23 A
TC = 125°C, I D = 23 A
16
14
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-To-Source Voltage (V)
D006
1
Gate Charge
8
ID = 23 A
7 VDS = 15 V
6
5
4
3
2
1
0
0 5 10 15 20 25 30 35 40 45 50
Qg - Gate Charge (nC)
D010
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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