CSD87312Q3E_14 Datasheet, PDF (1/13 Pages) Texas Instruments – Dual 30V N-Channel NexFET Power MOSFETs

CSD87312Q3E
www.ti.com
SLPS333 – NOVEMBER 2012
Dual 30-V N-Channel NexFET™ Power MOSFETs
FEATURES
1
• Common Source Conn_ ection
• Ultr^Za^ZZL^WLo^FRw^P Drain to Drain On-Resistance
• Space Saving SON 3.3 x 3.3mm Plastic
Package
• Op^timized for 5V Gate Drive
• Low_x Thermal Resistance
• Ava_xlanche Rated
• Pb^xxFree Terminal Plating
• Ro_xHS Compliant
• Hal^xxogen Free
APPL^xxIC₊A_DOT_RJI_HO_Q)N_UHS_H
• Adaptor/USB Input Protection for Notebook
PC_xs and Tablets
DESCRIPTION
The CSD87312Q3E is a 30V common-source, dual
N-channel device designed for adaptor/USB input
protection. This SON 3.3 x 3.3mm device has low
drain to drain on-resistance that minimizes losses and
offers low component count for space constrained
multi-c_ell battery charging applications.

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Top View

Top View


D1
D2

D1
D2

S

D1
D2

D1
G

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Circuit Image







.
PRODUCT SUMMARY
T_A = 25°C

TYPICAL VALUE
V_DS
Drain to Sour⁶c^/e³V⁶o^lt^a^g^ದe^{6(37(0%(5 }30
Q_g
Gate Charge Total (4.5V)
6.3
Q_gd
Gate Charge Gate to Drain
0.7
R_DD(on)
Drain to Drain On Resistance
(Q1+Q2)
V_GS = 4.5V
V_GS = 8V
31
27
V_GS(th) Threshold Voltage
1.0
UNIT
V
nC
nC
mΩ
mΩ
V
ORDERING INFORMATION
Device
CSD87312Q3E
Package
SON 3.3 x 3.3mm
Plastic Package
Med_:ia
13-In:ch
Reel
Qty
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
I_D
Continuous Drain Current, T_C = 25°C⁽¹⁾
I_DM Pulsed Drain Current ⁽²⁾
P_D Power Dissipation
T_J, Operating Junction and Storage
T_STG Temperature Range
E_AS
Avalanche Energy, single pulse
I_D = 24A, L = 0.1mH, R_G = 25Ω
VALUE
30
+10/-8
27
45
2.5
UNIT
V
V
A
A
W
–55 to 150 °C
29
mJ
(1) Typical R =63°C/W on 1in² (2 oz.) on 0.060" thick FR4PCB
(2) Pulse duration ≤300μs, duty cycle ≤2%
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V_GS vs. R_DDon
60
T_C = 25°C Id = 7A
T55
T_C = 125ºC Id = 7A
50
”P
”
45
40
35
30
25
20
0
2
4
6
8
10
V_GS - Gate-to- Source Voltage (V)
G001
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1
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Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2012, Texas Instruments Incorporated