CSD85312Q3E Datasheet, PDF (1/13 Pages) Texas Instruments – Dual 20 V N-Channel NexFE Power MOSFETs

CSD85312Q3E
www.ti.com
SLPS457 – NOVEMBER 2013
Dual 20 V N-Channel NexFET™ Power MOSFETs
FEATURES
1
• Common Source Connection
• Low Drain to Drain On-Resistance
• Space Saving SON 3.3 x 3.3 mm Plastic
Package
• Optimized for 5 V Gate Drive
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
APPLICATIONS
• Adaptor or USB Input Protection for Notebook
PCs and Tablets
DESCRIPTION
The CSD85312Q3E is a 20 V common-source, dual
N-channel device designed for adaptor or USB input
protection. This SON 3.3 x 3.3 mm device has low
drain to drain on-resistance that minimizes losses and
offers low component count for space constrained
multi-cell battery charging applications.
Top View
D1 1
8 D2
D1 2
7 D2
S
D1 3
6 D2
NC 4
5G
Circuit Image
Common Source
Drain 1
Drain 2
Common Gate
.
PRODUCT SUMMARY
T_A = 25°C
V_DS
Drain to Source Voltage
Q_g
Gate Charge Total (4.5 V)
Q_gd
Gate Charge Gate to Drain
R_DD(on)
Drain to Drain On Resistance
(Q1 + Q2)
V_GS(th) Threshold Voltage
TYPICAL VALUE
20
11.7
1.6
V_GS = 4.5 V
V_GS = 8 V
1.1
11.7
10.3
UNIT
V
nC
nC
mΩ
mΩ
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD85312Q3E
SON 3.3 x 3.3 mm
Plastic Package
13 Inch
Reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
Continuous Drain Current (Package Limited)
I_D
Continuous Drain Current ⁽¹⁾
I_DM Pulsed Drain Current ⁽²⁾
P_D Power Dissipation
T_J, Operating Junction and Storage Temperature
T_STG Range
E_AS
Avalanche Energy, Single Pulse
I_D = 38 A, L = 0.1 mH, R_G = 25 Ω
VALUE
20
+10/–8
39
12
76
2.5
–55 to
150
UNIT
V
V
A
A
A
W
°C
72
mJ
(1) Typical R_θJA =63°C/W on 1 inch² (2 oz.) on 0.060 inch thick
FR4PCB
(2) Pulse duration ≤ 300 μs, duty cycle ≤ 2%
TEXT ADDED FOR SPACING
V_GS vs. R_DD(on)
30
27
T_C = 25°C, Id = 10A
T_C = 125ºC, Id = 10A
24
21
18
15
12
9
6
3
0
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to- Source Voltage (V)
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated