CSD85301Q2 Datasheet, PDF (1/15 Pages) Texas Instruments – 20V Dual N-Channel NexFET Power MOSFETs

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CSD85301Q2
SLPS521 – DECEMBER 2014
CSD85301Q2 20 V Dual N-Channel NexFET™ Power MOSFETs
1 Features
•1 Low On-Resistance
• Dual Independent MOSFETs
• Space Saving SON 2 × 2 mm Plastic Package
• Optimized for 5 V Gate Driver
• Avalanche Rated
• Pb and Halogen Free
• RoHS Compliant
2 Applications
• Point-of-Load Synchronous Buck Converter for
Applications in Networking, Telecom, and
Computing Systems
• Adaptor or USB Input Protection for Notebook
PCs and Tablets
• Battery Protection
3 Description
The CSD85301Q2 is a 20 V, 23 mΩ N-Channel
device with dual independent MOSFETs in a SON 2 x
2 mm plastic package. The two FETs were designed
to be used in a half bridge configuration for
synchronous buck and other power supply
applications. Additionally, this part can be used for
adaptor, USB input protection and battery charging
applications. The dual FETs feature low drain to
source on-resistance that minimizes losses and offers
low component count for space constrained
applications.
Top View and Circuit Image
Drain
Drain
S1
D1
D1
G1
G2 Gate
Gate
.
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (4.5 V)
Q_gd
Gate Charge Gate to Drain
R_DS(on) Drain-to-Source On Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
20
4.2
1.0
V_GS = 1.8 V
65
V_GS = 2.5 V
33
V_GS = 3.8 V
25
V_GS = 4.5 V
23
0.9
UNIT
V
nC
nC
mΩ
mΩ
mΩ
mΩ
V
Device
CSD85301Q2
CSD85301Q2T
.
Ordering Information⁽¹⁾
Media
Qty
Package
7-Inch Reel
7-Inch Reel
3000 _{SON 2 x 2 mm}
250 ^{Plastic Package}
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
I_D
Continuous Drain Current (Package limited)
I_DM Pulsed Drain Current⁽¹⁾
P_D
Power Dissipation⁽²⁾
T_J, Operating Junction and
T_stg Storage Temperature Range
E_AS
Avalanche Energy, single pulse
I_D = 8.7 A, L = 0.1 mH, R_G = 25 Ω
VALUE
20
±10
5.0
26
2.3
–55 to 150
3.8
UNIT
V
V
A
A
W
°C
mJ
(1) Max R_θJA = 185 °C/W, pulse duration ≤100 μs, duty cycle
≤1%.
(2) Typical R_θJA = 55 °C/W on a 1 inch², 2 oz. Cu pad on a 0.06
inch thick FR4 PCB.
D2
D2
S2
Source
Source
R_DS(on) vs V_GS
70
TC = 25°C, I D = 5 A
60
TC = 125°C, I D = 5 A
50
40
30
20
10
0
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
D007
1
Gate Charge
5
4.5
ID = 5 A
VDS = 10 V
4
3.5
3
2.5
2
1.5
1
0.5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Qg - Gate Charge (nC)
D004
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.