CSD75208W1015 Datasheet, PDF (1/12 Pages) Texas Instruments – Dual 20V Common Source P-Channel NexFET Power MOSFET

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CSD75208W1015
SLPS512 – JULY 2014
CSD75208W1015 Dual 20-V Common Source P-Channel NexFET™ Power MOSFET
1 Features
•1 Dual P-Channel MOSFETs
• Common Source Configuration
• Small Footprint 1 mm × 1.5 mm
• Gate-Source Voltage Clamp
• Gate ESD Protection –3 kV
• Pb Free
• RoHS Compliant
• Halogen Free
2 Applications
• Battery Management
• Load Switch
• Battery Protection
3 Description
This device is designed to deliver the lowest on-
resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra-low profile. Low on-resistance coupled with the
small footprint and low profile make the device ideal
for battery operated space constrained applications.
Top View
P0099-01
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (–4.5 V)
Q_gd
Gate Charge Gate-to-Drain
R_DS(on)
Drain-to-Source
On-Resistance
R_D1D2(on)
Drain-to-Drain
On-Resistance
V_GS(th)
Threshold Voltage
TYPICAL VALUE
–20
1.9
0.23
V_GS = –1.8 V
100
V_GS = –2.5 V
70
V_GS = –4.5 V
56
V_GS = –1.8 V
190
V_GS = –2.5 V
120
V_GS = –4.5 V
90
–0.8
UNIT
V
nC
nC
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
V
Ordering Information⁽¹⁾
Device
Qty
Media
Package
CSD75208W1015 3000 7-Inch Reel
CSD75208W1015T 250 7-Inch Reel
1.0 mm × 1.5 mm
Wafer Level
Package
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
I_D1D2
Continuous Drain-to-Drain Current,
T_C = 25°C
Pulsed Drain-to-Drain Current,
T_C = 25°C⁽¹⁾
Continuous Source Pin Current
I_S
Pulsed Source Pin Current^{(1) (2)}
VALUE
–20
–6
–1.6
–22
–3
–39
UNIT
V
V
A
A
A
A
Continuous Gate Clamp Current
I_G
Pulsed Gate Clamp Current⁽¹⁾
–0.5
A
–7
A
P_D Power Dissipation
T_J, Operating Junction and
T_stg Storage Temperature Range
0.75
W
–55 to 150 °C
(1) Max R_θJA = 165ºC/W, pulse duration ≤100 μs, duty cycle ≤1%
(2) Both devices in parallel
270
240
210
180
150
120
90
60
30
0
0
R_D1D2(on) vs V_GS
T_C = 25°C,I _D = −1 A
T_C = 125°C,I _D = −1 A
1
2
3
4
5
6
− V_GS - Gate-to- Source Voltage (V)
G001
1
150
135
120
105
90
75
60
45
30
15
0
0
R_DS(on) vs V_GS
T_C = 25°C,I _D = −1 A
T_C = 125°C,I _D = −1 A
1
2
3
4
5
6
− V_GS - Gate-to- Source Voltage (V)
G001
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.