CSD25481F4_16 Datasheet, PDF (1/13 Pages) Texas Instruments – 20 V P-Channel FemtoFET MOSFET

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CSD25481F4
SLPS420D – SEPTEMBER 2013 – REVISED OCTOBER 2014
CSD25481F4 20 V P-Channel FemtoFET™ MOSFET
1 Features
•1 Ultra-Low On Resistance
• Ultra-Low Q_g and Q_gd
• High Operating Drain Current
• Ultra-Small Footprint (0402 Case Size)
– 1 mm × 0.6 mm
• Ultra-Low Profile
– 0.35 mm Max Height
• Integrated ESD Protection Diode
– Rated >4 kV HBM
– Rated >2 kV CDM
• Lead and Halogen Free
• RoHS Compliant
2 Applications
• Optimized for Load Switch Applications
• Optimized for General Purpose Switching
Applications
• Battery Applications
• Handheld and Mobile Applications
3 Description
This 90 mΩ, 20 V P-Channel FemtoFET™ MOSFET
is designed and optimized to minimize the footprint in
many handheld and mobile applications. This
technology is capable of replacing standard small
signal MOSFETs while providing at least a 60%
reduction in footprint size.
.
Typical Part Dimensions
0.35 ^mm
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (–4.5 V)
Q_gd
Gate Charge Gate-to-Drain
R_DS(on)
Drain-to-Source
On-Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
–20
913
153
V_GS = –1.8 V 395
V_GS = –2.5 V 145
V_GS = –4.5 V 90
–0.95
UNIT
V
pC
pC
mΩ
mΩ
mΩ
V
Device
CSD25481F4
CSD25481F4T
Ordering Information⁽¹⁾
Qty Media
Package
3000
250
7-Inch
Reel
7-Inch
Reel
Femto(0402)
1.0 mm × 0.6 mm
Land Grid Array (LGA)
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C unless otherwise stated
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
I_D
Continuous Drain Current⁽¹⁾
I_DM
Pulsed Drain Current⁽²⁾
Continuous Gate Clamp Current
I_G
Pulsed Gate Clamp Current⁽²⁾
P_D
Power Dissipation⁽¹⁾
Human Body Model (HBM)
V _{(ESD) Charged Device Model (CDM)}
VALUE
–20
–12
–2.5
–10
–35
–350
500
4
2
UNIT
V
V
A
A
mA
mW
kV
kV
T_J,
Operating Junction and
T_stg Storage Temperature Range
–55 to 150 °C
(1) Typical R_θJA = 85°C/W on 1 inch² (6.45 cm²), 2 oz.
(0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4
PCB.
(2) Pulse duration ≤ 300 μs, duty cycle ≤ 2%
Top View
0.60 _mm
.
.
1.00 ^mm
D
GS
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.