CSD25480F3 Datasheet, PDF (1/14 Pages) Texas Instruments – 20V P-Channel FemtoFET MOSFET

Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
CSD25480F3 –20-V P-Channel FemtoFET™ MOSFET
CSD25480F3
SLPS578 – APRIL 2016
1 Features
•1 Low On Resistance
• Ultra-Low Q_g and Q_gd
• Ultra-Small Footprint
– 0.73 mm × 0.64 mm
• Low Profile
– 0.35-mm Max Height
• Integrated ESD Protection Diode
• Lead and Halogen Free
• RoHS Compliant
2 Applications
• Optimized for Load Switch Applications
• Optimized for General Purpose Switching
Applications
• Battery Applications
• Handheld and Mobile Applications
3 Description
This –20-V, 110-mΩ, P-Channel FemtoFET™
MOSFET is designed and optimized to minimize the
footprint in many handheld and mobile applications.
This technology is capable of replacing standard
small signal MOSFETs while providing a substantial
reduction in footprint size.
text added for spacing
text added for spacing
text added for spacing
text added for spacing
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (–4.5 V)
Q_gd
Gate Charge Gate-to-Drain
R_DS(on)
Drain-to-Source
On-Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
–20
0.7
0.10
V_GS = –1.8 V 420
V_GS = –2.5 V 203
V_GS = –4.5 V 132
V_GS = –8.0 V 110
–0.95
UNIT
V
nC
nC
mΩ
mΩ
mΩ
mΩ
V
DEVICE
CSD25480F3
CSD25480F3T
Ordering Information⁽¹⁾
QTY
MEDIA
PACKAGE
3000
250
7-Inch Reel
7-Inch Reel
Femto
0.73-mm × 0.64-mm
Land Grid Array (LGA)
SHIP
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C (unless otherwise stated)
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
I_D
Continuous Drain Current⁽¹⁾
I_DM
Pulsed Drain Current⁽¹⁾⁽²⁾
P_D
Power Dissipation⁽¹⁾
Human Body Model (HBM)
V_{(ESD) Charged Device Model (CDM)}
VALUE
–20
–12
–1.7
–10.6
500
4000
2000
UNIT
V
V
A
A
mW
V
V
T_J,
Operating Junction,
T_stg Storage Temperature
–55 to 150 °C
(1) Typical R_θJA = 255°C/W mounted on FR4 material with
minimum Cu mounting area.
(2) Pulse duration ≤100 μs, duty cycle ≤1%.
text added for spacing
Typical Part Dimensions...............
Top View.........
0.35 mm
G
D
0.64 mm
0.73 mm
S
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.