CSD25402Q3A Datasheet, PDF (1/13 Pages) Texas Instruments – 20 V P-Channel NexFET Power MOSFET

CSD25402Q3A
www.ti.com
20 V P-Channel NexFET™ Power MOSFET
Check for Samples: CSD25402Q3A
SLPS454 – DECEMBER 2013
FEATURES
1
•2 Ultra-Low Q_g and Q_gd
• Low Thermal Resistance
• Low R_DS(on)
• Pb and Halogen Free
• RoHS Compliant
• SON 3.3 mm × 3.3 mm Plastic Package
APPLICATIONS
• DC-DC Converters
• Battery Management
• Load Switch
• Battery Protection
DESCRIPTION
This –20 V, 7.7 mΩ NexFET™ power MOSFET is
designed to minimize losses in power conversion load
management applications with a SON 3 × 3 package
that offers an excellent thermal performance for the
size of the device.
Top View
D1
D2
8S
7S
D3
4
G
6S
S
5
S
PRODUCT SUMMARY
V_DS
Drain-to-Source Voltage
–20
V
Q_g
Gate Charge Total (–4.5 V)
7.5
nC
Q_gd
Gate Charge Gate to Drain
1.1
nC
V_GS = –1.8 V 74 mΩ
R_DS(on) Drain-to-Source On Resistance V_GS = –2.5 V 13.3 mΩ
V_GS = –4.5 V 7.7 mΩ
V_th
Threshold Voltage
–0.9
V
ORDERING INFORMATION
Device
Package
Media
Qty
CSD25402Q3A
SON 3 × 3 Plastic
Package
13-inch
reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
Continuous Drain Current, T_C = 25°C
I_D
Continuous Drain Current (Package Limit)
Continuous Drain Current⁽¹⁾
I_DM Pulsed Drain Current⁽²⁾
P_D
Power Dissipation⁽¹⁾
T_J, Operating Junction and Storage
T_STG Temperature Range
VALUE
–20
+12 or –12
–72
–35
–15
–82
2.8
UNIT
V
V
A
A
A
A
W
–55 to 150 °C
(1) R_θJA = 55°C/W on 1 inch² Cu (2 oz.) on 0.060" thick FR4
PCB.
(2) Pulse width ≤300 µs, duty cycle ≤2%
24
21
18
15
12
9
6
3
0
0
R_DS(on) vs V_GS
T_C = 25°C,I _D = −10A
T_C = 125°C,I _D = −10A
2
4
6
8
10
12
− V_GS - Gate-to- Source Voltage (V)
G001
8
I_D = −10A
7 V_DS = −10V
6
GATE CHARGE
5
4
3
2
1
0
0
2
4
6
8
10
12
14
Q_g - Gate Charge (nC)
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated