CSD25401Q3 Datasheet, PDF (1/11 Pages) Texas Instruments – P-Channel NexFET™ Power MOSFETs

CSD25401Q3
www.ti.com
SLPS211B – AUGUST 2009 – REVISED OCTOBER 2010
P-Channel NexFET™ Power MOSFETs
Check for Samples: CSD25401Q3
FEATURES
1
•2 Ultra Low Q_g and Q_gd
• Low Thermal Resistance
• Low R_DS(on)
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 3.3mm x 3.3mm Plastic Package
APPLICATIONS
• DC-DC Converters
• Battery Management
• Load Switch
• Battery Protection
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion load
management applications. The SON 3×3 package
offers excellent thermal performance for the size of
the package.
Top View
D1
D2
8S
7S
D3
4
G
6S
S
5
S
Table 1. PRODUCT SUMMARY
V_DS
Drain to Source Voltage
Q_g
Gate Charge Total (4.5V)
Q_gd
Gate Charge Gate to Drain
R_DS(on) Drain to Source On Resistance
V_th
Threshold Voltage
–20
V
8.8
nC
2.1
nC
V_GS = –2.5V 13.5 mΩ
V_GS = –4.5V
8.8 mΩ
–0.85
V
ORDERING INFORMATION
Device
Package
Media
Qty
CSD25401Q3
SON 3 × 3 Plastic 13-inch
Package
reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
I_D
Continuous Drain Current, T_C = 25°C
Continuous Drain Current⁽¹⁾
I_DM Pulsed Drain Current, T_A = 25°C⁽²⁾
P_D
Power Dissipation⁽¹⁾
T_J, Operating Junction and Storage
T_STG Temperature Range
VALUE
–20
+12 / -12
–60
–14
–82
2.8
UNIT
V
V
A
A
A
W
–55 to 150 °C
(1) R_qJA = 45°C/W on 1inch² Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width ≤300µs , duty cycle ≤2%
R_DS(ON) vs V_GS
30
I_D = −10A
25
20
T_C = 125°C
15
10
5
T_C = 25°C
0
0 1 2 3 4 5 6 7 8 9 10
−V_GS − Gate to Source Voltage − V
G006
Gate Charge
10
9 ^{ID = −10A}
8 ^{VDS = −10V}
7
6
5
4
3
2
1
0
0
2
4
6
8 10 12 14 16
Q_g − Gate Charge − nC
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2010, Texas Instruments Incorporated