CSD25310Q2 Datasheet, PDF (1/11 Pages) Texas Instruments – CSD25310Q2, 20 V P-Channel NexFET Power MOSFETs

CSD25310Q2
www.ti.com
SLPS459 – JANUARY 2014
CSD25310Q2, 20 V P-Channel NexFET™ Power MOSFETs
Check for Samples: CSD25310Q2
FEATURES
1
•2 Ultra-Low Q_g and Q_gd
• Low On Resistance
• Low Thermal Resistance
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 2-mm × 2-mm Plastic Package
PRODUCT SUMMARY
V_DS
Drain-to-Source Voltage
–20
V
Q_g
Gate Charge Total (–4.5 V)
3.6
nC
Q_gd
Gate Charge Gate to Drain
0.5
nC
V_GS = –1.8 V 59.0 mΩ
R_DS(on) Drain-to-Source On Resistance V_GS = –2.5 V 27.0 mΩ
V_GS = –4.5 V 19.9 mΩ
V_GS(th) Threshold Voltage
-0.85
V
APPLICATIONS
• Battery Management
• Load Management
• Battery Protection
DESCRIPTION
This 19.9 mΩ, –20 V P-Channel device is designed to
deliver the lowest on resistance and gate charge in
the smallest outline possible with excellent thermal
characteristics in an ultra-low profile. Its low on
resistance coupled with an extremely small footprint
in a SON 2 mm × 2 mm plastic package make the
device ideal for battery operated space constrained
operations.
Top View
S1
S
6S
ORDERING INFORMATION
Device
Package
Media Qty
CSD25310Q2
SON 2-mm × 2-mm
Plastic Package
7-Inch
Reel
3000
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
Continuous Drain Current (Package Limit)
I_D
Continuous Drain Current⁽¹⁾
I_DM Pulsed Drain Current⁽²⁾
P_D
Power Dissipation⁽¹⁾
T_J, Operating Junction and Storage
T_STG Temperature Range
VALUE
–20
±8
–20
–9.6
48
2.9
UNIT
V
V
A
A
A
W
–55 to 150 °C
(1) R_θJA = 43°C/W on 1 in² Cu (2 oz.) on .060-inch thick FR4
PCB.
(2) Pulse duration 10 μs, duty cycle ≤ 2%
S2
5S
G3
D
4D
P0112-01
R_DS(on) vs V_GS
80
GATE CHARGE
5
72
T_C = 25°C,I _D = −5A
T_C = 125°C,I _D = −5A
4.5
I_D = −5A
V_DS = −10V
64
4
56
3.5
48
3
40
2.5
32
2
24
1.5
16
1
8
0.5
0
0
1
2
3
4
5
6
7
8
− V_GS - Gate-to- Source Voltage (V)
G001
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Q_g - Gate Charge (nC)
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of a027317.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2014, Texas Instruments Incorporated