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CSD25301W1015 Datasheet, PDF (1/11 Pages) Texas Instruments – P-Channel NexFET™ Power MOSFET
CSD25301W1015
www.ti.com
SLPS210B – AUGUST 2009 – REVISED OCTOBER 2010
P-Channel NexFET™ Power MOSFET
Check for Samples: CSD25301W1015
FEATURES
1
• Ultra Low Qg and Qgd
• Small Footprint
• Low Profile 0.62mm Height
• Pb Free
• RoHS Compliant
• Halogen Free
• CSP 1 × 1.5 mm Wafer Level Package
APPLICATIONS
• Battery Management
• Load Switch
• Battery Protection
DESCRIPTION
The device has been designed to deliver the lowest
on resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra low profile.
Top View
D
D
S
S
PRODUCT SUMMARY
VDS
Drain to Source Voltage
–20
V
Qg
Gate Charge Total (4.5V)
1.9
nC
Qgd
Gate Charge Gate to Drain
0.4
nC
VGS = –1.5V 175 mΩ
RDS(on) Drain to Source On Resistance VGS = –2.5V
80 mΩ
VGS = –4.5V
62 mΩ
VGS(th) Voltage Threshold
–0.75
V
ORDERING INFORMATION
Device
Package
Media
Qty
CSD25301W1015
1 × 1.5 Wafer
Level Package
7-inch reel 3000
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Continuous Drain Current, TC = 25°C(1)
IDM Pulsed Drain Current, TA = 25°C(2)
PD
Power Dissipation(1)
TJ, Operating Junction and Storage
TSTG Temperature Range
VALUE
–20
±8
–2.2
–8.8
1.5
UNIT
V
V
A
A
W
–55 to 150 °C
(1) RqJA = 85°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width ≤300ms, duty cycle ≤2%
300
250
200
150
100
50
0
0
S
G
P0099-01
RDS(ON) vs VGS
ID = −1A
TC = 125°C
TC = 25°C
1
2
3
4
5
−VGS − Gate to Source Voltage − V
6
G006
6
ID = −1A
5 VDS = −10V
Gate Charge
4
3
2
1
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
Qg − Gate Charge − nC
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2010, Texas Instruments Incorporated