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CSD25201W15 Datasheet, PDF (1/9 Pages) Texas Instruments – P-Channel NexFET™ Power MOSFET
CSD25201W15
www.ti.com
SLPS269A – JUNE 2010 – REVISED JULY 2011
P-Channel NexFET™ Power MOSFET
Check for Samples: CSD25201W15
FEATURES
1
• Low Resistance
• Small Footprint 1.5-mm × 1.5-mm
• Gate ESD Protection –3kV
• Pb Free
• RoHS Compliant
• Halogen Free
• Gate-Source Voltage Clamp
APPLICATIONS
• Battery Management
• Battery Protection
PRODUCT SUMMARY
VDS
Drain to Drain Voltage
–20
V
Qg
Gate Charge Total (–4.5V)
4.3
nC
Qgd
Gate Charge Gate to Drain
0.7
nC
VGS = –1.8V
52 mΩ
RDS(on) Drain to Source On Resistance VGS = –2.5V
42 mΩ
VGS = –4.5V
33 mΩ
VGS(th) Threshold Voltage
–0.7
V
Text Added For Spacing
ORDERING INFORMATION
Device
Package
Media Qty
CSD25201W15
1.5-mm × 1.5-mm
Wafer Level Package
7-Inch
Reel
3000
Ship
Tape and
Reel
DESCRIPTION
The device has been designed to deliver the lowest
on resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra low profile. Low on resistance coupled with the
small footprint and low profile make the device ideal
for battery operated space constrained applications.
Top View
Pin A1 Indicator
G
D
S
Symbol
Source
Gate
D
D
S
D
S
S
Drain
Text Added For Spacing
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Continuous Drain Current(1)(2)
ID
Pulsed Drain Current(1)(2)
Continuous Gate Current(1)(2)
IG
Pulsed Gate Current(1)(2)
PD
Power Dissipation(1)
TJ, Operating Junction and Storage
TSTG Temperature Range
VALUE
–20
–6
4
4
0.5
7
1.5
–55 to 150
(1) Based on Min Cu footprint
(2) Ball limited
UNIT
V
V
A
A
A
A
W
°C
P0117-01
100
90
80
70
60
50
40
30
20
10
0
0
RDS(on) vs VGS
TJ = 25°C
TJ = 125°C
1
2
3
4
-VGS - Gate-to-Source Voltage - V
ID = -2A
5
6
G006
4.5
4
ID = -2A
VDS = -10V
3.5
GATE CHARGE
3
2.5
2
1.5
1
0.5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Qg - Gate Charge - nC
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010–2011, Texas Instruments Incorporated