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CSD23381F4 Datasheet, PDF (1/12 Pages) Texas Instruments – CSD23381F4, 12 V P-Channel FemtoFET MOSFET | |||
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CSD23381F4
SLPS450B â OCTOBER 2013 â REVISED FEBRUARY 2014
CSD23381F4, 12 V P-Channel FemtoFET⢠MOSFET
1 Features
â¢1 Ultra-Low On Resistance
⢠Ultra-Low Qg and Qgd
⢠High Operating Drain Current
⢠Ultra-Small Footprint (0402 Case Size)
â 1.0 mm à 0.6 mm
⢠Ultra-Low Profile
â 0.35 mm Max Height
⢠Integrated ESD Protection Diode
â Rated > 4 kV HBM
â Rated > 2 kV CDM
⢠Lead and Halogen Free
⢠RoHS Compliant
.
Product Summary
VDS
Drain-to-Source Voltage
â12
V
Qg
Gate Charge Total (â4.5 V)
1140
pC
Qgd
Gate Charge Gate to Drain
190
pC
VGS = â1.8 V 480 mâ¦
RDS(on) Drain-to-Source On Resistance VGS = â2.5 V 250 mâ¦
VGS = â4.5 V 150 mâ¦
VGS(th) Threshold Voltage
â0.95
V
Device
CSD23381F4
CSD23381F4T
.
Ordering Information
Qty Media
Package
3000
250
7-Inch
Reel
Femto(0402)
1.0 mm x 0.6 mm
Land Grid Array (LGA)
Ship
Tape and
Reel
2 Applications
⢠Optimized for Load Switch Applications
⢠Optimized for General Purpose Switching
Applications
⢠Battery Applications
⢠Handheld and Mobile Applications
3 Description
This 150 mΩ, 12 V P-Channel FemtoFET⢠MOSFET
is designed and optimized to minimize the footprint in
many handheld and mobile applications. This
technology is capable of replacing standard small
signal MOSFETs while providing at least a 60%
reduction in footprint size.
.
Typical Part Dimensions
0.35 mm
.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID
Continuous Drain Current(1)
IDM
Pulsed Drain Current(2)
Continuous Gate Clamp Current
IG
Pulsed Gate Clamp Current(2)
PD
Power Dissipation(1)
ESD Human Body Model (HBM)
Rating Charged Device Model (CDM)
VALUE
â12
â8
â2.3
â9
â35
â350
500
4
2
UNIT
V
V
A
A
mA
mW
kV
kV
TJ,
Operating Junction and
TSTG Storage Temperature Range
â55 to 150 °C
(1) Typical RθJA = 85°C/W on 1-inch2 (6.45-cm2), 2-oz. (0.071-
mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
(2) Pulse duration ⤠300 μs, duty cycle ⤠2%
Top View
D
0.60 mm
.
1.00 mm
GS
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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