CSD23203W Datasheet, PDF (1/12 Pages) Texas Instruments – 8 V P-Channel NexFET Power MOSFET

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CSD23203W
SLPS533 – DECEMBER 2014
CSD23203W 8 V P-Channel NexFET™ Power MOSFET
1 Features
•1 Ultra-Low Q_g and Q_gd
• Low R_DS(on)
• Small Footprint
• Low Profile 0.62 mm Height
• Pb Free
• RoHS Compliant
• Halogen Free
• CSP 1 × 1.5 mm Wafer Level Package
2 Applications
• Battery Management
• Load Switch
• Battery Protection
3 Description
This 16.2 mΩ, –8 V, P-Channel device is designed to
deliver the lowest on-resistance and gate charge in a
small 1.0 × 1.5 mm outline with excellent thermal
characteristics in an ultra-low profile.
Top View
D
S
G
D
S
S
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (–4.5 V)
Q_gd
Gate Charge Gate-to-Drain
R_DS(on)
Drain-to-Source
On-Resistance
V_GS(th) Voltage Threshold
TYPICAL VALUE
–8
4.9
0.6
V_GS = –1.8 V
V_GS = –2.5 V
V_GS = –4.5 V
–0.8
35.0
22.0
16.2
UNIT
V
nC
nC
mΩ
mΩ
mΩ
V
Device
CSD23203W
CSD23203WT
Ordering Information⁽¹⁾
Qty
Media
Package
3000 7-Inch Reel
250 7-Inch Reel
1.0 mm × 1.5 mm
Wafer Level
Package
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
I_D
Continuous Drain Current⁽¹⁾
I_DM Pulsed Drain Current⁽²⁾
P_D Power Dissipation
T_J, Operating Junction and
T_stg Storage Temperature Range
VALUE
–8
–6
–3.0
–54
0.75
UNIT
V
V
A
A
W
–55 to 150 °C
(1) Device operating at a temperature of 105ºC
(2) Typ R_θJA = 170°C/W, Pulse width ≤100 μs, duty cycle ≤1%
R_DS(on) vs V_GS
60
T_C = 25°C, I _D = -1.5 A
T_C = 125°C, I _D = -1.5 A
50
40
30
20
10
0
0
1
2
3
4
5
6
-V_GS - Gate-To-Source Voltage (V)
D007
5
I_D = -1.5 A
V_DS = -4 V
4
Gate Charge
3
2
1
0
0
1
2
3
4
5
6
Q_g - Gate Charge (nC)
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.