CSD19538Q3A Datasheet, PDF (1/13 Pages) Texas Instruments – 100 V N-Channel NexFET Power MOSFET

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CSD19538Q3A
SLPS583 – MAY 2016
CSD19538Q3A 100 V N-Channel NexFET™ Power MOSFET
1 Features
•1 Ultra-Low Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• Lead Free
• RoHS Compliant
• Halogen Free
• SON 3.3-mm × 3.3-mm Plastic Package
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (10 V)
Q_gd
Gate Charge Gate to Drain
R_DS(on) Drain-to-Source On-Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
100
4.3
0.8
V_GS = 6 V
58
V_GS = 10 V
49
3.2
UNIT
V
nC
nC
mΩ
mΩ
V
2 Applications
• Power Over Ethernet (PoE)
• Power Sourcing Equipment (PSE)
• Motor Control
3 Description
This 100-V, 49-mΩ, SON 3.3-mm × 3.3-mm
NexFET™ power MOSFET is designed to minimize
conduction losses and reduce board footprint in PoE
applications.
Top View
S1
8D
S2
7D
S3
D
G4
Text added for spacing
Text added for spacing
Text added for spacing
6D
5D
P0093-01
DEVICE
CSD19538Q3A
CSD19538Q3AT
.
Device Information⁽¹⁾
MEDIA
QTY
PACKAGE
13-Inch Reel
7-Inch Reel
3000
SON
3.3-mm x 3.3-mm
250 _{Plastic Package}
SHIP
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
Continuous Drain Current (Package
Limited)
VALUE
100
±20
15
UNIT
V
V
A
I_D
Continuous Drain Current (Silicon Limited),
T_C = 25°C
14
A
Continuous Drain Current⁽¹⁾
4.9
A
I_DM Pulsed Drain Current⁽²⁾
Power Dissipation⁽¹⁾
P_D
Power Dissipation, T_C = 25°C
37
A
2.8
W
23
W
T_J, Operating Junction Temperature,
T_stg Storage Temperature
–55 to 150 °C
E_AS
Avalanche Energy, Single Pulse
I_D = 12.7 A, L = 0.1 mH, R_G = 25 Ω
8.1
mJ
(1) Typical R_θJA = 45°C/W on a 1-in², 2-oz Cu pad on a 0.06 in
thick FR4 PCB.
(2) Max R_θJC = 5.5°C/W, pulse duration ≤ 100 μs, duty cycle ≤
1%.
R_DS(on) vs V_GS
200
180
T_C = 25qC, I_D = 5 A
T_C = 125qC, I_D = 5 A
160
140
120
100
80
60
40
20
0
0 2 4 6 8 10 12 14 16 18 20
V_GS - Gate-to-Source Voltage (V)
D007
1
Gate Charge
10
9
I_D = 5 A
V_DS = 100 V
8
7
6
5
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Q_g - Gate Charge (nC)
D004
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.