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CSD19538Q2 Datasheet, PDF (1/14 Pages) Texas Instruments – 100V N-Channel NexFET Power MOSFET
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CSD19538Q2 100-V N-Channel NexFET™ Power MOSFET
CSD19538Q2
SLPS582 – JULY 2016
1 Features
•1 Ultra-Low Qg and Qgd
• Low-Thermal Resistance
• Avalanche Rated
• Lead Free
• RoHS Compliant
• Halogen Free
• SON 2-mm × 2-mm Plastic Package
2 Applications
• Power Over Ethernet (PoE)
• Power Sourcing Equipment (PSE)
• Motor Control
3 Description
This 100-V, 49-mΩ, SON 2-mm × 2-mm NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
Top View
D1
D
D2
6D
5D
G3
S
4S
P0108-01
.
.
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (10 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
100
4.3
0.8
VGS = 6 V
58
VGS = 10 V
49
3.2
UNIT
V
nC
nC
mΩ
mΩ
V
DEVICE
CSD19538Q2
CSD19538Q2T
Device Information(1)
MEDIA
QTY
PACKAGE
7-Inch Reel
7-Inch Reel
3000
250
SON
2.00-mm x 2.00-mm
Plastic Package
SHIP
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package Limited)
VALUE
100
±20
14.4
UNIT
V
V
ID
Continuous Drain Current (Silicon Limited),
TC = 25°C
Continuous Drain Current(1)
IDM Pulsed Drain Current(2)
Power Dissipation(1)
PD
Power Dissipation, TC = 25°C
TJ, Operating Junction Temperature,
Tstg Storage Temperature
EAS
Avalanche Energy, Single Pulse
ID = 12.6 A, L = 0.1 mH, RG = 25 Ω
13.1
A
4.6
34.4
A
2.5
W
20.2
–55 to 150 °C
8
mJ
(1) Typical RθJA = 50°C/W on a 1-in2, 2-oz Cu pad on a 0.06-in
thick FR4 PCB.
(2) Max RθJC = 6.2°C/W, pulse duration ≤ 100 μs, duty cycle ≤
1%.
RDS(on) vs VGS
200
180
TC = 25qC, ID = 5 A
TC = 125qC, ID = 5 A
160
140
120
100
80
60
40
20
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to-Source Voltage (V)
D007
1
Gate Charge
10
9
ID = 5 A
VDS = 100 V
8
7
6
5
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Qg - Gate Charge (nC)
D004
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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