CSD19537Q3 Datasheet, PDF (1/13 Pages) Texas Instruments – 100V N-Channel NexFET Power MOSFET

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CSD19537Q3
SLPS549A – AUGUST 2015 – REVISED MAY 2016
CSD19537Q3 100-V N-Channel NexFET™ Power MOSFET
1 Features
•1 Ultra-Low Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• Lead Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 3.3-mm × 3.3-mm Plastic Package
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (10 V)
Q_gd
Gate Charge Gate-to-Drain
R_DS(on) Drain-to-Source On-Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
100
16
2.9
V_GS = 6 V
V_GS = 10 V
3
13.8
12.1
UNIT
V
nC
nC
mΩ
mΩ
V
2 Applications
• Primary Side Isolated Converters
• Motor Control
3 Description
This 100-V, 12.1-mΩ, SON 3.3-mm × 3.3-mm
NexFET™ power MOSFET is designed to minimize
losses in power conversion applications.
Top View
S1
8D
S2
7D
S3
6D
D
G4
5D
P0095-01
.
.
.
DEVICE
CSD19537Q3
CSD19537Q3T
.
Ordering Information⁽¹⁾
MEDIA
QTY
PACKAGE
SHIP
13-Inch Reel 2500 _{SON 3.3- x 3.3-mm Tape and}
13-Inch Reel 250 ^{Plastic Package}
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
Continuous Drain Current (Package
Limited)
VALUE
100
±20
50
UNIT
V
V
A
I_D
Continuous Drain Current (Silicon Limited),
T_C = 25°C
53
A
Continuous Drain Current⁽¹⁾
9.7
A
I_DM Pulsed Drain Current⁽²⁾
Power Dissipation⁽¹⁾
P_D
Power Dissipation, T_C = 25°C
219
A
2.8
W
83
W
T_J, Operating Junction Temperature,
T_stg Storage Temperature
–55 to 150 °C
E_AS
Avalanche Energy, Single Pulse
I_D = 33 A, L = 0.1 mH, R_G = 25 Ω
55
mJ
(1) Typical R_θJA = 45°C/W on a 1-in², 2-oz Cu pad on a 0.06-in
thick FR4 PCB.
(2) Max R_θJC = 1.5°C/W, pulse duration ≤ 100 μs, duty cycle ≤
1%.
R_DS(on) vs V_GS
40
T_C = 25°C, I _D = 10 A
35
T_C = 125°C, I _D = 10 A
30
25
20
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
V_GS - Gate-To-Source Voltage (V)
D007
1
Gate Charge
10
9
I_D = 10 A
V_DS = 50 V
8
7
6
5
4
3
2
1
0
0
2
4
6
8 10 12 14 16
Q_g - Gate Charge (nC)
D004
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.