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CSD19536KTT Datasheet, PDF (1/14 Pages) Texas Instruments – 100V N-Channel NexFET Power MOSFET
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CSD19536KTT
SLPS540A – MARCH 2015 – REVISED MAY 2015
CSD19536KTT 100 V N-Channel NexFET™ Power MOSFET
1 Features
•1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• D2PAK Plastic Package
2 Applications
• Secondary Side Synchronous Rectifier
• Hot Swap
• Motor Control
3 Description
This 100 V, 2.0 mΩ, D2PAK (TO-263) NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
SPACE
Pin Out
Drain (Pin 2)
Gate
(Pin 1)
Source (Pin 3)
Product Summary
TA = 25°C
VDS
Drain-to-source voltage
Qg
Gate charge total (10 V)
Qgd
Gate charge gate-to-drain
RDS(on) Drain-to-source on-resistance
VGS(th) Threshold voltage
TYPICAL VALUE
100
118
17
VGS = 6 V
2.2
VGS = 10 V
2.0
2.5
UNIT
V
nC
nC
mΩ
mΩ
V
DEVICE
CSD19536KTT
CSD19536KTTT
Ordering Information(1)
QTY MEDIA
PACKAGE
500 13-Inch
50
Reel
D2PAK Plastic
Package
SHIP
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-source voltage
VGS Gate-to-source voltage
Continuous drain current (package limited)
VALUE
100
±20
200
UNIT
V
V
ID
Continuous drain current (silicon limited), TC
= 25°C
272
A
Continuous drain current (silicon limited), TC
= 100°C
192
IDM Pulsed drain current (1)
400
A
PD Power dissipation
375
W
TJ, Operating junction,
Tstg Storage temperature
–55 to 175 °C
EAS
Avalanche energy, single pulse
ID = 127 A, L = 0.1 mH, RG = 25 Ω
806
mJ
(1) Max RθJC = 0.4°C/W, Pulse duration ≤100 µs, Duty cycle
≤1%.
.
RDS(on) vs VGS
8
TC = 25°C, I D = 100 A
7
TC = 125°C, I D = 100 A
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to-Source Voltage (V)
D007
10
9
ID = 100 A
VDS = 50 V
8
7
6
5
4
3
2
1
0
0 12 24
Gate Charge
36 48 60 72 84
Qg - Gate Charge (nC)
96 108 120
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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