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CSD19536KCS Datasheet, PDF (1/10 Pages) Texas Instruments – CSD19536KCS, 100 V N-Channel NexFET Power MOSFET
CSD19536KCS
www.ti.com
SLPS485 – JANUARY 2014
CSD19536KCS, 100 V N-Channel NexFET™ Power MOSFET
Check for Samples: CSD19536KCS
FEATURES
1
•2 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• TO-220 Plastic Package
PRODUCT SUMMARY
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (10 V)
Qgd
Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
100
118
17
VGS = 6 V
2.5
VGS = 10 V
2.3
2.5
UNIT
V
nC
nC
mΩ
mΩ
V
APPLICATIONS
• Secondary Side Synchronous Rectifier
• Motor Control
DESCRIPTION
This 100 V, 2.3 mΩ, TO-220 NexFET™ power
MOSFET is designed to minimize losses in power
conversion applications.
Pin Out Drawing
Drain (Pin 2)
Gate
(Pin 1)
Source (Pin 3)
ORDERING INFORMATION
Device
Package
Media Qty
CSD19536KCS
TO-220 Plastic
Package
Tube
50
Ship
Tube
ABSOLUTE MAXIMUM RATINGS
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
100
±20
150
ID
IDM
PD
TJ,
TSTG
EAS
Continuous Drain Current (Silicon limited),
TC = 25°C
Continuous Drain Current (Silicon limited),
TC = 100°C
Pulsed Drain Current (1)
Power Dissipation
Operating Junction and Storage
Temperature Range
Avalanche Energy, single pulse
ID = 127 A, L = 0.1 mH, RG = 25 Ω
259
183
224
375
–55 to 175
806
(1) Pulse duration ≤ 300 μs, Duty cycle ≤ 1%
UNIT
V
V
A
A
W
°C
mJ
RDS(on) vs VGS
10
9
TC = 25°C,I D = 100A
TC = 125°C,I D = 100A
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage (V)
G001
10
9
ID = 100A
VDS = 50V
8
GATE CHARGE
7
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80 90 100 110 120
Qg - Gate Charge (nC)
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2014, Texas Instruments Incorporated
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