CSD19533Q5A_16 Datasheet, PDF (1/14 Pages) Texas Instruments – 100V N-Channel NexFET Power MOSFET

Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
CSD19533Q5A
SLPS486A – DECEMBER 2013 – REVISED MAY 2014
CSD19533Q5A 100 V N-Channel NexFET™ Power MOSFET
1 Features
•1 Ultra-Low Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (10 V)
Q_gd
Gate Charge Gate to Drain
R_DS(on) Drain-to-Source On Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
100
27
4.9
V_GS = 6 V
8.7
V_GS = 10 V
7.8
2.8
UNIT
V
nC
nC
mΩ
mΩ
V
2 Applications
• Primary Side Telecom
• Secondary Side Synchronous Rectifier
• Motor Control
3 Description
This 100 V, 7.8 mΩ, SON 5 mm × 6 mm NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0093-01
Device
CSD19533Q5A
CSD19533Q5AT
.
Ordering Information⁽¹⁾
Media
Qty
Package
13-Inch Reel 2500 _{SON 5 x 6 mm}
7-Inch Reel 250 ^{Plastic Package}
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
100
±20
100
UNIT
V
V
I_D
Continuous Drain Current (Silicon limited),
T_C = 25°C
75
A
Continuous Drain Current, T_A = 25 °C⁽¹⁾
13
I_DM Pulsed Drain Current, T_A = 25 °C⁽²⁾
231
A
Power Dissipation⁽¹⁾
P_D
Power Dissipation, T_C = 25°C
3.2
W
96
T_J, Operating Junction and
T_stg Storage Temperature Range
–55 to 150 °C
E_AS
Avalanche Energy, single pulse
I_D = 46 A, L = 0.1 mH, R_G = 25 Ω
106
mJ
(1) Typical R_θJA = 40 °C/W on a 1-inch², 2-oz. Cu pad on a
0.06-inch thick FR4 PCB.
(2) Max R_θJC = 1.3°C/W, pulse duration ≤100 μs, duty cycle ≤1%
R_DS(on) vs V_GS
30
27
T_C = 25°C,I _D = 13A
T_C = 125°C,I _D = 13A
24
21
18
15
12
9
6
3
0
0 2 4 6 8 10 12 14 16 18 20
V_GS - Gate-to- Source Voltage (V)
G001
Gate Charge
10
9
I_D = 13A
V_DS = 50V
8
7
6
5
4
3
2
1
0
036
9 12 15 18 21 24 27 30
Q_g - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.