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CSD19533Q5A Datasheet, PDF (1/13 Pages) Texas Instruments – 100 V N-Channel NexFET Power MOSFETs
CSD19533Q5A
www.ti.com
100 V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD19533Q5A
SLPS486 – DECEMBER 2013
FEATURES
1
•2 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
PRODUCT SUMMARY
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (10 V)
Qgd
Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
100
27
4.9
VGS = 6 V
8.7
VGS = 10 V
7.8
2.8
UNIT
V
nC
nC
mΩ
mΩ
V
APPLICATIONS
• Primary Side Telecom
• Secondary Side Synchronous Rectifier
• Motor Control
DESCRIPTION
This 100 V, 7.8 mΩ, SON 5 mm x 6 mm NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0093-01
ORDERING INFORMATION
Device
Package
Media Qty
CSD19533Q5A
SON 5-mm × 6-mm
Plastic Package
13-Inch
Reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
100
±20
100
UNIT
V
V
ID
Continuous Drain Current (Silicon limited),
TC = 25°C
75
A
Continuous Drain Current, TA = 25 °C(1)
13
IDM Pulsed Drain Current, TA = 25 °C(2)
80
A
PD
Power Dissipation(1)
3.2
W
TJ, Operating Junction and
TSTG Storage Temperature Range
–55 to 150 °C
EAS
Avalanche Energy, single pulse
ID = 46 A, L = 0.1 mH, RG = 25 Ω
106
mJ
(1) Typical RθJA = 40 °C/W on a 1-inch2, 2-oz. Cu pad on a 0.06-
inch thick FR4 PCB.
(2) Pulse duration ≤ 300 μs, duty cycle ≤ 1%
RDS(on) vs VGS
30
27
TC = 25°C,I D = 13A
TC = 125°C,I D = 13A
24
21
18
15
12
9
6
3
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage (V)
G001
10
9
ID = 13A
VDS = 50V
8
7
6
5
4
3
2
1
0
036
GATE CHARGE
9 12 15 18 21 24 27 30
Qg - Gate Charge (nC)
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated
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