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CSD19532Q5B Datasheet, PDF (1/13 Pages) Texas Instruments – 100 V N-Channel NexFET Power MOSFET
CSD19532Q5B
www.ti.com
100 V N-Channel NexFET™ Power MOSFET
Check for Samples: CSD19532Q5B
SLPS414 – DECEMBER 2013
FEATURES
1
•2 Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
PRODUCT SUMMARY
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (10 V)
Qgd
Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
100
48
8.7
VGS = 6 V
4.6
VGS = 10 V
4.0
2.6
UNIT
V
nC
nC
mΩ
mΩ
V
APPLICATIONS
• Synchronous Rectifier for Offline and Isolated
DC-DC Converters
• Motor Control
DESCRIPTION
This 4.0 mΩ, 100 V, SON 5-mm × 6-mm NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0093-01
ORDERING INFORMATION
Device
Package
Media Qty
CSD19532Q5B
SON 5-mm × 6-mm
Plastic Package
13-Inch
Reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
100
±20
100
UNIT
V
V
ID
Continuous Drain Current (Silicon limited),
TC = 25°C
124
A
Continuous Drain Current(1)
17
IDM Pulsed Drain Current(2)
PD
Power Dissipation(1)
200
A
3.1
W
TJ, Operating Junction and Storage
TSTG Temperature Range
–55 to 150 °C
EAS
Avalanche Energy, single pulse
ID = 74 A, L = 0.1 mH, RG = 25 Ω
274
mJ
(1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06-
inch thick FR4 PCB.
(2) Pulse duration ≤100 µs, duty cycle ≤2%
RDS(on) vs VGS
20
18
TC = 25°C,I D = 17A
TC = 125°C,I D = 17A
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage (V)
G001
10
9
ID = 17A
VDS = 50V
8
GATE CHARGE
7
6
5
4
3
2
1
0
0 5 10 15 20 25 30 35 40 45 50
Qg - Gate Charge (nC)
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated
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