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CSD19532KTT Datasheet, PDF (1/12 Pages) Texas Instruments – N-Channel NexFET Power MOSFET
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CSD19532KTT
SLPS553 – OCTOBER 2015
CSD19532KTT 100 V N-Channel NexFET™ Power MOSFET
1 Features
•1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• D2PAK Plastic Package
2 Applications
• Secondary Side Synchronous Rectifier
• Hot Swap
• Motor Control
3 Description
This 100 V, 4.6 mΩ, D2PAK (TO-263) NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
SPACE
Pin Out
Drain (Pin 2)
Gate
(Pin 1)
Source (Pin 3)
.
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (10 V)
Qgd
Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
100
44
5.6
VGS = 6 V
5.3
VGS = 10 V
4.6
2.6
UNIT
V
nC
nC
mΩ
mΩ
V
DEVICE
CSD19532KTT
CSD19532KTTT
Ordering Information(1)
QTY MEDIA
PACKAGE
500
50
13-Inch
Reel
D2PAK Plastic Package
SHIP
Tape &
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
100
±20
200
UNIT
V
V
Continuous Drain Current (Silicon limited),
ID
TC = 25°C
136
A
Continuous Drain Current (Silicon limited),
TC = 100°C
98
IDM Pulsed Drain Current (1)
400
A
PD Power Dissipation
250
W
TJ, Operating Junction and
Tstg Storage Temperature Range
–55 to 175 °C
EAS
Avalanche Energy, single pulse
ID = 72 A, L = 0.1 mH, RG = 25 Ω
259
mJ
(1) Max RθJC = 0.6°C/W, Pulse duration ≤ 100 µs,
Duty cycle ≤ 1%
Text added for spacing
RDS(on) vs VGS
14
TC = 25°C, I D = 90 A
12
TC = 125°C, I D = 90 A
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to-Source Voltage (V)
D007
Gate Charge
10
9
ID = 90 A
VDS = 50 V
8
7
6
5
4
3
2
1
0
0
6 12 18 24 30 36 42 48
Qg - Gate Charge (nC)
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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