CSD19531Q5A Datasheet, PDF (1/14 Pages) Texas Instruments – 100V N-Channel NexFET Power MOSFETs

CSD19531Q5A
www.ti.com
SLPS406A – SEPTEMBER 2013 – REVISED JANUARY 2014
CSD19531Q5A 100 V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD19531Q5A
FEATURES
1
•2 Ultra-Low Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5 mm × 6 mm Plastic Package
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (10 V)
Q_gd
Gate Charge Gate to Drain
R_DS(on) Drain-to-Source On Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
100
37
6.6
V_GS = 6 V
6.0
V_GS = 10 V
5.3
2.7
UNIT
V
nC
nC
mΩ
mΩ
V
APPLICATIONS
• Primary Side Telecom
• Secondary Side Synchronous Rectifier
• Motor Control
Device
CSD19531Q5A
CSD19531Q5AT
.
Ordering Information
Media
Qty
Package
13-Inch Reel 2500 _{SON 5 x 6 mm}
7-Inch Reel 250 ^{Plastic Package}
Ship
Tape and
Reel
DESCRIPTION
This 100 V, 5.3 mΩ, SON 5 mm x 6mm NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0093-01
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
100
±20
100
UNIT
V
V
I_D
Continuous Drain Current (Silicon limited),
T_C = 25°C
110
A
Continuous Drain Current⁽¹⁾
16
I_DM Pulsed Drain Current⁽²⁾
P_D
Power Dissipation⁽¹⁾
100
A
3.3
W
T_J, Operating Junction and
T_STG Storage Temperature Range
–55 to 150 °C
E_AS
Avalanche Energy, single pulse
I_D = 60 A, L = 0.1 mH, R_G = 25 Ω
180
mJ
(1) Typical R_θJA = 40°C/W on a 1-inch², 2-oz. Cu pad on a 0.06-
inch thick FR4 PCB.
(2) Pulse duration ≤ 300 μs, duty cycle ≤ 1%
R_DS(on) vs V_GS
20
18
T_C = 25°C,I _D = 16A
T_C = 125°C,I _D = 16A
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
V_GS - Gate-to- Source Voltage (V)
G001
10
9
I_D = 16A
V_DS = 50V
8
7
6
5
4
3
2
1
0
048
GATE CHARGE
12 16 20 24 28 32 36 40
Q_g - Gate Charge (nC)
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013–2014, Texas Instruments Incorporated