CSD19531KCS Datasheet, PDF (1/7 Pages) Texas Instruments – 100V N-Channel NexFE Power MOSFETs

CSD19531KCS
www.ti.com
100V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD19531KCS
SLPS407 – SEPTEMBER 2013
FEATURES
1
•2 Ultra Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• TO-220 Plastic Package
PRODUCT SUMMARY
T_A = 25°C
V_DS
Drain to Source Voltage
Q_g
Gate Charge Total (10V)
Q_gd
Gate Charge Gate to Drain
R_DS(on) Drain to Source On Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
100
37
7.5
V_GS = 6V
7.3
V_GS = 10V
6.4
2.7
UNIT
V
nC
nC
mΩ
mΩ
V
APPLICATIONS
• Secondary Side Synchronous Rectifier
• Hot Swap Telecom
• Motor Control
DESCRIPTION
This 100V, 6.4mΩ, TO-220 NexFET™ power
MOSFET has been designed to minimize losses in
power conversion applications.
Pin Out Drawing
Drain (Pin 2)
Gate
(Pin 1)
Source (Pin 3)
ORDERING INFORMATION
Device
Package
Media Qty
CSD19531KCS
TO-220 Plastic
Package
Tube
50
Ship
Tube
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
Continuous Drain Current (Package limited),
T_C = 25°C
I_D
Continuous Drain Current (Silicon limited),
T_C = 25°C
Continuous Drain Current (Silicon limited),
T_C = 100°C
I_DM Pulsed Drain Current ⁽¹⁾
P_D Power Dissipation
T_J, Operating Junction and Storage
T_STG Temperature Range
E_AS
Avalanche Energy, single pulse
I_D = 60A, L = 0.1mH, R_G = 25Ω
VALUE
100
±20
100
105
67
122
179
–55 to 150
180
(1) Pulse duration ≤300μs, Duty cycle ≤1%
UNIT
V
V
A
A
W
°C
mJ
R_DS(on) vs V_GS
20
GATE CHARGE
10
18
T_C = 25°C,I _D = 60A
T_C = 125°C,I _D = 60A
9
I_D = 60A
V_DS = 50V
16
8
14
7
12
6
10
5
8
4
6
3
4
2
2
1
0
0 2 4 6 8 10 12 14 16 18 20
V_GS - Gate-to- Source Voltage (V)
G001
0
0 4 8 12 16 20 24 28 32 36 40
Q_g - Gate Charge (nC)
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated