English
Language : 

CSD19501KCS Datasheet, PDF (1/10 Pages) Texas Instruments – CSD19501KCS, 80 V N-Channel NexFET Power MOSFETs
CSD19501KCS
www.ti.com
SLPS478 – JANUARY 2014
CSD19501KCS, 80 V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD19501KCS
FEATURES
1
•2 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• TO-220 Plastic Package
PRODUCT SUMMARY
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (10 V)
Qgd
Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
80
38
5.8
VGS = 6 V
6.2
VGS = 10 V
5.5
2.6
UNIT
V
nC
nC
mΩ
mΩ
V
APPLICATIONS
• Secondary Side Synchronous Rectifier
• Motor Control
DESCRIPTION
This 80 V, 5.5 mΩ, TO-220 NexFET™ power
MOSFET is designed to minimize losses in power
conversion applications.
Pinout Drawing
Drain (Pin 2)
Gate
(Pin 1)
Source (Pin 3)
ORDERING INFORMATION
Device
Package
Media Qty
CSD19501KCS
TO-220 Plastic
Package
Tube
50
Ship
Tube
ABSOLUTE MAXIMUM RATINGS
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
80
±20
100
ID
IDM
PD
TJ,
TSTG
EAS
Continuous Drain Current (Silicon limited),
TC = 25°C
Continuous Drain Current (Silicon limited),
TC = 100°C
Pulsed Drain Current (1)
Power Dissipation
Operating Junction and
Storage Temperature Range
Avalanche Energy, single pulse
ID = 65 A, L = 0.1 mH, RG = 25 Ω
129
91
146
217
–55 to 175
211
(1) Pulse duration ≤ 300 μs, Duty cycle ≤ 1%
UNIT
V
V
A
A
W
°C
mJ
RDS(on) vs VGS
18
TC = 25°C,I D = 60A
16
TC = 125°C,I D = 60A
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage (V)
G001
10
9
ID = 60A
VDS = 40V
8
7
6
5
4
3
2
1
0
048
GATE CHARGE
12 16 20 24 28 32 36 40
Qg - Gate Charge (nC)
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2014, Texas Instruments Incorporated
 ▷