CSD18563Q5A_16 Datasheet, PDF (1/13 Pages) Texas Instruments – N-Channel NexFET Power MOSFET

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CSD18563Q5A
SLPS444C – JULY 2013 – REVISED JANUARY 2016
CSD18563Q5A 60 V N-Channel NexFET™ Power MOSFET
1 Features
•1 Ultra-Low Q_g and Q_gd
• Soft Body Diode for Reduced Ringing
• Low Thermal Resistance
• Avalanche Rated
• Logic Level
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5 mm × 6 mm Plastic Package
2 Applications
• Low-Side FET for Industrial Buck Converter
• Secondary Side Synchronous Rectifier
• Motor Control
3 Description
This 5.7 mΩ, 60 V SON 5 mm × 6 mm NexFET™
power MOSFET was designed to pair with the
CSD18537NQ5A control FET and act as the sync
FET for a complete industrial buck converter chipset
solution.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0093-01
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (10 V)
Q_gd
Gate Charge Gate-to-Drain
R_DS(on) Drain-to-Source On-Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
60
15.0
2.9
V_GS = 4.5 V
8.6
V_GS = 10 V
5.7
2.0
UNIT
V
nC
nC
mΩ
mΩ
V
DEVICE
CSD18563Q5A
CSD18563Q5AT
.
Ordering Information⁽¹⁾
MEDIA
QTY
PACKAGE
13-Inch Reel 2500 _{SON 5 × 6 mm}
7-Inch Reel 250 ^{Plastic Package}
SHIP
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
60
±20
100
UNIT
V
V
I_D
Continuous Drain Current (Silicon limited),
T_C = 25°C
93
A
Continuous Drain Current⁽¹⁾
15
I_DM Pulsed Drain Current⁽²⁾
Power Dissipation⁽¹⁾
P_D
Power Dissipation, TC = 25°C
251
A
3.2
W
116
T_J, Operating Junction Temperature,
T_stg Storage Temperature
E_AS
Avalanche Energy, single pulse
I_D = 54 A, L = 0.1 mH, R_G = 25 Ω
–55 to 150 °C
146
mJ
(1) Typical R_θJA = 40°C/W on a 1 inch², 2 oz. Cu pad on a 0.06
inch thick FR4 PCB.
(2) Max R_θJC = 1.3°C/W, pulse duration ≤100 μs, duty cycle ≤1%.
R_DS(on) vs V_GS
24
T_C = 25°C,I _D = 18A
21
T_C = 125°C,I _D = 18A
18
15
12
9
6
3
0
0 2 4 6 8 10 12 14 16 18 20
V_GS - Gate-to- Source Voltage (V)
G001
Gate Charge
10
9
I_D = 18A
V_DS = 30V
8
7
6
5
4
3
2
1
0
0
2
4
6
8 10 12 14 16
Q_g - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.