CSD18543Q3A Datasheet, PDF (1/13 Pages) Texas Instruments – CSD18543Q3A 60-V N-Channel NexFET Power MOSFET

Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
CSD18543Q3A
SLPS633 – DECEMBER 2016
CSD18543Q3A 60-V N-Channel NexFET™ Power MOSFET
1 Features
•1 Ultra-Low Q_g and Q_gd
• Low R_DS(on)
• Low-Thermal Resistance
• Avalanche Rated
• Lead Free
• RoHS Compliant
• Halogen Free
• SON 3.3-mm × 3.3-mm Plastic Package
2 Applications
• Solid State Relay Switch
• DC-DC Conversion
• Secondary Side Synchronous Rectifier
• Isolated Converter Primary Side Switch
• Motor Control
3 Description
This 60-V, 8.1-mΩ, SON 3.3-mm × 3.3-mm
NexFET™ power MOSFET is designed to minimize
losses in power conversion applications.
Top View
S1
8D
S2
7D
S3
6D
D
G4
5D
P0093-01
.
.
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (10 V)
Q_gd
Gate Charge Gate-to-Drain
R_DS(on) Drain-to-Source On Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
60
11.1
1.7
V_GS = 4.5 V
V_GS = 10 V
2.0
12.0
8.1
UNIT
V
nC
nC
mΩ
V
Device Information⁽¹⁾
DEVICE
MEDIA QTY
PACKAGE
CSD18543Q3A 13-Inch Reel 2500
SON
3.30-mm × 3.30-mm
CSD18543Q3AT 7-Inch Reel 250
Plastic Package
SHIP
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
Continuous Drain Current (Package Limited)
VALUE
60
±20
35
UNIT
V
V
I_D
Continuous Drain Current (Silicon Limited),
T_C = 25°C
Continuous Drain Current⁽¹⁾
I_DM Pulsed Drain Current⁽²⁾
Power Dissipation⁽¹⁾
P_{D Power Dissipation, TC = 25°C}
T_J, Operating Junction,
T_stg Storage Temperature
E_AS
Avalanche Energy, Single Pulse
I_D = 33 A, L = 0.1 mH, R_G = 25 Ω
60
A
12
156
A
2.8
W
66
–55 to 150 °C
55
mJ
(1) Typical R_θJA = 45°C/W on a 1-in², 2-oz Cu pad on a
0.06-in thick FR4 PCB.
(2) Max R_θJC = 1.9°C/W, pulse duration ≤ 100 μs, duty cycle ≤
1%.
R_DS(on) vs V_GS
30
27
T_C = 25°C, I _D = 12 A
T_C = 125°C, I _D = 12 A
24
21
18
15
12
9
6
3
0
0 2 4 6 8 10 12 14 16 18 20
V_GS - Gate-to-Source Voltage (V)
D007
1
Gate Charge
10
9
I_D = 12 A
V_DS = 30 V
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
Q_g - Gate Charge (nC)
D004
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.