CSD18541F5 Datasheet, PDF (1/14 Pages) Texas Instruments – 60V N-Channel FemtoFET MOSFET

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CSD18541F5 60-V N-Channel FemtoFET™ MOSFET
CSD18541F5
SLPS571 – MAY 2016
1 Features
•1 Low On-Resistance
• Ultra-Low Q_g and Q_gd
• Ultra-Small Footprint
– 1.53 mm × 0.77 mm
• Low Profile
– 0.35-mm Height
• Integrated ESD Protection Diode
• Lead and Halogen Free
• RoHS Compliant
2 Applications
• Optimized for Industrial Load Switch Applications
• Optimized for General Purpose Switching
Applications
3 Description
This 54-mΩ, 60-V N-Channel FemtoFET™ MOSFET
technology is designed and optimized to minimize the
footprint in many space constrained industrial load
switch applications. This technology is capable of
replacing standard small signal MOSFETs while
providing a significant reduction in footprint size.
.
.
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (10 V)
Q_gd
Gate Charge Gate-to-Drain
R_DS(on) Drain-to-Source On-Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
60
11
1.6
V_GS = 4.5 V
57
V_GS = 10 V
54
1.75
UNIT
V
nC
nC
mΩ
mΩ
V
DEVICE
CSD18541F5
CSD18541F5T
Ordering Information⁽¹⁾
QTY MEDIA
PACKAGE
3000
250
7-Inch
Reel
Femto
1.53-mm × 0.77-mm
SMD Lead Less
SHIP
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
I_D
Continuous Drain Current⁽¹⁾
I_DM
Pulsed Drain Current⁽¹⁾⁽²⁾
P_D
Power Dissipation
T_J
Operating Junction Temperature
T_stg Storage Temperature
E_AS
Avalanche Energy, Single Pulse
I_D = 12.8 A, L = 0.1 mH, R_G = 25 Ω
VALUE
60
±20
2.2
21
500
–55 to 150
–55 to 150
8.2
(1) Typical R_θJA = 245°C/W.
(2) Pulse duration ≤100 μs, duty cycle ≤1%.
UNIT
V
V
A
A
mW
°C
°C
mJ
Typical Part Dimensions
0.35 mm
Top View
G
S
0.77 mm
1.53 mm
D
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.