CSD18540Q5B_16 Datasheet, PDF (1/13 Pages) Texas Instruments – 60V N-Channel NexFET Power MOSFETs

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CSD18540Q5B
SLPS488A – JUNE 2014 – REVISED JUNE 2016
CSD18540Q5B 60-V, N-Channel NexFET™ Power MOSFETs
1 Features
•1 Ultra-Low Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• Lead-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
2 Applications
• DC-DC Conversion
• Secondary Side Synchronous Rectifier
• Isolated Converter Primary Side Switch
• Motor Control
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (10 V)
Q_gd
Gate Charge Gate-to-Drain
R_DS(on) Drain-to-Source On Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
60
41
6.7
V_GS = 4.5 V 2.6
V_GS = 10 V
1.8
1.9
UNIT
V
nC
nC
mΩ
mΩ
V
DEVICE
CSD18540Q5B
CSD18540Q5BT
Ordering Information⁽¹⁾
QTY MEDIA
PACKAGE
2500 13-Inch Reel
SON
5.00-mm × 6.00-mm
250 7-Inch Reel _{Plastic Package}
SHIP
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
3 Description
This 1.8-mΩ, 60-V NexFET™ power MOSFET is
designed to minimize losses in power conversion
applications with a SON 5-mm × 5-mm package.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0093-01
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
Continuous Drain Current (Package Limited)
VALUE
60
±20
100
UNIT
V
V
I_D
Continuous Drain Current (Silicon Limited),
T_C = 25°C
205
A
Continuous Drain Current⁽¹⁾
29
I_DM Pulsed Drain Current, T_A = 25°C⁽²⁾
Power Dissipation⁽¹⁾
P_D
Power Dissipation, T_C = 25°C
400
A
3.8
W
188
T_J, Operating Junction,
T_stg Storage Temperature
–55 to 175 °C
E_AS
Avalanche Energy, Single Pulse
I_D = 80 A, L = 0.1 mH, R_G = 25 Ω
320
mJ
(1) Typical R_θJA = 40°C/W on a 1-in², 2-oz Cu pad on a 0.06-in
thick FR4 PCB.
(2) Max R_θJC = 0.8°C/W, pulse duration ≤ 100 μs, duty cycle ≤
1%.
R_DS(on) vs V_GS
5
4.5
T_C = 25°C, I _D = 28 A
T_C = 125°C, I _D = 28 A
4
3.5
3
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 12 14 16 18 20
V_GS - Gate-to-Source Voltage (V)
D007
1
Gate Charge
10
9
I_D = 28 A
V_DS = 30 V
8
7
6
5
4
3
2
1
0
0 5 10 15 20 25 30 35 40 45
Q_g - Gate Charge (nC)
D004
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.