CSD18532Q5B_16 Datasheet, PDF (1/14 Pages) Texas Instruments – 60V N-Channel NexFET Power MOSFETs

Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
CSD18532Q5B
SLPS322B – NOVEMBER 2012 – REVISED JULY 2014
CSD18532Q5B 60-V N-Channel NexFET™ Power MOSFETs
1 Features
•1 Ultra-Low Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• Logic Level
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
2 Applications
• DC-DC Conversion
• Secondary Side Synchronous Rectifier
• Isolated Converter Primary Side Switch
• Motor Control
3 Description
This 2.5 mΩ, 60 V SON 5 mm × 6 mm NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0093-01
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (10 V)
Q_gd
Gate Charge Gate-to-Drain
R_DS(on) Drain-to-Source On Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
60
44
6.9
V_GS = 4.5 V 3.3
V_GS = 10 V
2.5
1.8
UNIT
V
nC
nC
mΩ
mΩ
V
Device
CSD18532Q5B
CSD18532Q5BT
Ordering Information⁽¹⁾
Qty
Media
Package
2500 13-Inch Reel _{SON 5 × 6 mm}
250 13-Inch Reel ^{Plastic Package}
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
60
±20
100
UNIT
V
V
I_D
Continuous Drain Current (Silicon limited),
T_C = 25°C
172
A
Continuous Drain Current⁽¹⁾
23
I_DM Pulsed Drain Current⁽²⁾
Power Dissipation⁽¹⁾
P_D
Power Dissipation, T_C = 25°C
400
A
3.2
W
156
T_J, Operating Junction and
T_stg Storage Temperature Range
–55 to 150 °C
E_AS
Avalanche Energy, single pulse
I_D = 80 A, L = 0.1 mH, R_G = 25 Ω
320
mJ
(1) Typical R_θJA = 40 °C/W on a 1-inch² , 2-oz. Cu pad on a 0.06-
inch thick FR4 PCB.
(2) Max R_θJC = 0.8 °C/W, Pulse duration ≤100 μs, duty cycle ≤1%
R_DS(on) vs V_GS
16
T_C = 25°C Id = 25A
14
T_C = 125ºC Id = 25A
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
V_GS - Gate-to- Source Voltage (V)
G001
Gate Charge
10
I_D = 25A
V_DS = 30V
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45
Q_g - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.