|
CSD18531Q5A_16 Datasheet, PDF (1/13 Pages) Texas Instruments – 60V N-Channel NexFET Power MOSFET | |||
|
Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
Reference
Design
CSD18531Q5A
SLPS321E â JUNE 2012 â REVISED AUGUST 2015
CSD18531Q5A 60 V N-Channel NexFET⢠Power MOSFET
1 Features
â¢1 Ultra-Low Qg and Qgd
⢠Low Thermal Resistance
⢠Avalanche Rated
⢠Logic Level
⢠Pb Free Terminal Plating
⢠RoHS Compliant
⢠Halogen Free
⢠SON 5 mm à 6 mm Plastic Package
2 Applications
⢠DC-DC Conversion
⢠Secondary Side Synchronous Rectifier
⢠Battery Motor Control
Product Summary
TA = 25°C
VDS
Drain-to-source voltage
Qg
Gate charge total (10 V)
Qgd
Gate charge gate-to-drain
RDS(on) Drain-to-source on-resistance
VGS(th) Threshold voltage
TYPICAL VALUE
60
36
5.9
VGS = 4.5 V
4.4
VGS = 10 V
3.5
1.8
UNIT
V
nC
nC
mâ¦
mâ¦
V
DEVICE
CSD18531Q5A
CSD18531Q5AT
Ordering Information(1)
QTY
MEDIA
PACKAGE
2500 13-Inch Reel
250 7-Inch Reel
SON 5 mm Ã
6 mm Plastic
Package
SHIP
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
3 Description
This 60-V, 3.5-mΩ, 5 mm à 6 mm NexFET⢠power
MOSFET is designed to minimize losses in power
conversion applications.
TOP VIEW
S1
8D
S2
7D
S3
D
G4
6D
5D
P0093-01
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-source voltage
VGS Gate-to-source voltage
Continuous drain current (package limited)
VALUE
60
±20
100
UNIT
V
V
ID
Continuous drain current (silicon limited), TC
= 25°C
134
A
Continuous drain current (1)
19
IDM Pulsed drain current (2)
Power dissipation(1)
PD
Power dissipation, TC = 25°C
370
A
3.1
W
156
TJ
Operating junction
â55 to 150 °C
Tstg Storage temperature
â55 to 150 °C
EAS
Avalanche energy, single pulse
ID = 67 A, L = 0.1 mH, RG = 25 â¦
224
mJ
(1) Typical RθJA = 40°C/W on a 1 inch2, 2 oz. Cu pad on a
0.06 inch thick FR4 PCB.
(2) Max RθJC = 1°C/W, pulse duration â¤100 μs, duty cycle â¤1%
RDS(on) vs VGS
Gate Charge
12
10
TC = 25°C, I D = 22 A
ID = 22 A
TC = 125°C, I D = 22 A
VDS = 30 V
10
8
8
6
6
4
4
2
2
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to-Source Voltage (V)
D007
0
0
5
10
15
20
25
30
35
Qg - Gate Charge (nC)
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
|
▷ |