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CSD18531Q5A_12 Datasheet, PDF (1/12 Pages) Texas Instruments – The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
CSD18531Q5A
www.ti.com
SLPS321B – JUNE 2012 – REVISED OCTOBER 2012
60V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD18531Q5A
FEATURES
1
•2 Ultra Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Logic Level
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
APPLICATIONS
• DC-DC Conversion
• Secondary Side Synchronous Rectifier
• Battery Motor Control
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications.
Figure 1. Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0093-01
PRODUCT SUMMARY
Typical Values at 25°C
unless otherwise stated
TYPICAL VALUE
VDS
Drain to Source Voltage
60
Qg
Gate Charge Total (4.5V)
18
Qgd
Gate Charge Gate to Drain
5.9
RDS(on) Drain to Source On Resistance
VGS = 4.5V
VGS = 10V
4.4
3.5
VGS(th) Threshold Voltage
1.8
UNIT
V
nC
nC
mΩ
mΩ
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD18531Q5A
SON 5-mm × 6-mm
Plastic Package
13-Inch
Reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Continuous Drain Current (Package limited),
TC = 25°C
ID
Continuous Drain Current (Silicon limited),
TC = 25°C
Continuous Drain Current, TA = 25°C(1)
IDM Pulsed Drain Current, TA = 25°C(2)
PD
Power Dissipation(1)
TJ, Operating Junction and Storage
TSTG Temperature Range
EAS
Avalanche Energy, single pulse
ID = 67A, L = 0.1mH, RG = 25Ω
VALUE
60
±20
100
134
19
122
3.1
–55 to 150
224
UNIT
V
V
A
A
W
°C
mJ
(1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06-
inch thick FR4 PCB.
(2) Pulse duration ≤300μs, duty cycle ≤2%
RDS(on) vs VGS
12
GATE CHARGE
10
TC = 25°C Id = 22A
ID = 22A
10
TC = 125ºC Id = 22A
VDS = 30V
8
8
6
6
4
4
2
2
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage - V
G001
0
0
5
10
15
20
25
30 33
Qg - Gate Charge - nC (nC)
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2012, Texas Instruments Incorporated
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