CSD18512Q5B Datasheet, PDF (1/13 Pages) Texas Instruments – CSD18512Q5B 40 V N-Channel NexFET Power MOSFET

Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
Reference
Design
CSD18512Q5B
SLPS624 – DECEMBER 2016
CSD18512Q5B 40 V N-Channel NexFET™ Power MOSFET
1 Features
•1 Low R_DS(ON)
• Low Thermal Resistance
• Avalanche Rated
• Logic Level
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen-Free
• SON 5 mm × 6 mm Plastic Package
2 Applications
• DC-DC Conversion
• Secondary Side Synchronous Rectifier
• Motor Control
Product Summary
T_A = 25°C
V_DS
Drain to source voltage
Q_g
Gate charge total (10 V)
Q_gd
Gate charge gate to drain
R_DS(on) Drain to source on resistance
V_GS(th) Threshold voltage
TYPICAL VALUE
40
75
13.3
V_GS = 4.5 V 1.8
V_GS = 10 V
1.3
1.6
UNIT
V
nC
nC
mΩ
mΩ
V
DEVICE
CSD18512Q5B
CSD18512Q5BT
Ordering Information⁽¹⁾
QTY MEDIA
PACKAGE
SHIP
2500 13-Inch Reel _{SON 5 mm × 6 mm Tape and}
250 7-Inch Reel ^{Plastic Package}
Reel
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
3 Description
This 40 V, 1.3 mΩ, 5 mm × 6 mm NexFET™ power
MOSFET is designed to minimize losses in power
conversion applications.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0093-01
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain to source voltage
V_GS Gate to source voltage
Continuous drain current (package limited)
VALUE
40
±20
100
UNIT
V
V
I_D
Continuous drain current (silicon limited),
T_C = 25°C
Continuous drain current⁽¹⁾
I_DM Pulsed drain current⁽²⁾
Power dissipation⁽¹⁾
P_D
Power dissipation, T_C = 25°C
T_J, Operating Junction,
T_stg Storage Temperature
E_AS
Avalanche energy, single pulse
I_D = 64 A, L = 0.1 mH, R_G = 25 Ω
211
A
32
400
A
3.1
W
139
–55 to 150 °C
205
mJ
(1) Typical R_θJA = 40°C/W on a 1 inch² , 2 oz. Cu pad on a 0.06
inch thick FR4 PCB.
(2) Max R_θJC = 0.9°C/W, pulse duration ≤100 μs, duty cycle ≤1%
R_DS(on) vs V_GS
8
T_C = 25°C, I _D = 30 A
7
T_C = 125°C, I _D = 30 A
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
V_GS - Gate-to-Source Voltage (V)
D007
Gate Charge
10
9 ^{ID = 30 A, VDS = 20 V}
8
7
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80
Q_g - Gate Charge (nC)
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.