English
Language : 

CSD18510KTT Datasheet, PDF (1/13 Pages) Texas Instruments – CSD18510KTT 40-V N-Channel NexFET Power MOSFET
Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
CSD18510KTT
SLPS638 – NOVEMBER 2016
CSD18510KTT 40-V N-Channel NexFET™ Power MOSFET
1 Features
•1 Ultra-Low Qg and Qgd
• Low-Thermal Resistance
• Avalanche Rated
• Lead-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• D2PAK Plastic Package
2 Applications
• Secondary Side Synchronous Rectifier
• Motor Control
3 Description
This 40-V, 1.4-mΩ, D2PAK (TO-263) NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
.
Drain (Pin 2)
Gate
(Pin 1)
Source (Pin 3)
.
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (10 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
40
132
24
VGS = 4.5 V
2.0
VGS = 10 V
1.4
1.7
UNIT
V
nC
nC
mΩ
V
DEVICE
CSD18510KTT
CSD18510KTTT
Device Information(1)
QTY
MEDIA
PACKAGE
500
13-Inch Reel
50
D2PAK
Plastic Package
SHIP
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package Limited)
VALUE
40
±20
200
UNIT
V
V
Continuous Drain Current (Silicon Limited),
ID
TC = 25°C
237
A
Continuous Drain Current (Silicon Limited),
TC = 100°C
167
IDM Pulsed Drain Current(1)
400
A
PD Power Dissipation
188
W
TJ, Operating Junction,
Tstg Storage Temperature
–55 to 175 °C
EAS
Avalanche Energy, Single Pulse
ID = 81 A, L = 0.1 mH, RG = 25 Ω
328
mJ
(1) Max RθJC = 0.8°C/W, pulse duration ≤ 100 μs, duty cycle ≤
1%.
RDS(on) vs VGS
8
TC = 25°C, I D = 100 A
7
TC = 125°C, I D = 100 A
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to-Source Voltage (V)
D007
Gate Charge
10
9 ID = 100 A, VDS = 20 V
8
7
6
5
4
3
2
1
0
0
20
40
60
80 100 120 140
Qg - Gate Charge (nC)
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.