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CSD18510KCS Datasheet, PDF (1/13 Pages) Texas Instruments – 40-V N-Channel NexFET Power MOSFET
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CSD18510KCS
SLPS663 – MARCH 2017
CSD18510KCS 40-V N-Channel NexFET™ Power MOSFET
1 Features
•1 Low Qg and Qgd
• Low RDS(ON)
• Low-Thermal Resistance
• Avalanche Rated
• Lead-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• D2PAK Plastic Package
2 Applications
• Secondary Side Synchronous Rectifier
• Motor Control
3 Description
This 40-V, 1.4-mΩ, TO-220 NexFET™ power
MOSFET is designed to minimize losses in power
conversion applications.
.
Drain (Pin 2)
Gate
(Pin 1)
.
Source (Pin 3)
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (10 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
40
118
21
VGS = 4.5 V
2.0
VGS = 10 V
1.4
1.7
UNIT
V
nC
nC
mΩ
V
DEVICE
CSD18510KCS
Device Information(1)
MEDIA
QTY
PACKAGE
Tube
50
TO-220
Plastic Package
SHIP
Tube
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package Limited)
VALUE
40
±20
200
UNIT
V
V
Continuous Drain Current (Silicon Limited),
ID
TC = 25°C
288
A
Continuous Drain Current (Silicon Limited),
TC = 100°C
204
IDM Pulsed Drain Current(1)
400
A
PD Power Dissipation
250
W
TJ, Operating Junction,
Tstg Storage Temperature
–55 to 175 °C
EAS
Avalanche Energy, Single Pulse
ID = 81 A, L = 0.1 mH, RG = 25 Ω
328
mJ
(1) Max RθJC = 0.6°C/W, pulse duration ≤ 100 μs, duty cycle ≤
1%.
RDS(on) vs VGS
8
TC = 25°C, I D = 100 A
7
TC = 125°C, I D = 100 A
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to-Source Voltage (V)
D007
Gate Charge
10
9 ID = 100 A, VDS = 20 V
8
7
6
5
4
3
2
1
0
0
20
40
60
80
Qg - Gate Charge (nC)
100
120
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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