CSD18503Q5A_16 Datasheet, PDF (1/13 Pages) Texas Instruments – 40V N-Channel NexFET Power MOSFET

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CSD18503Q5A
SLPS358C – JUNE 2012 – REVISED JUNE 2015
CSD18503Q5A 40 V N-Channel NexFET™ Power MOSFET
1 Features
•1 Ultra-Low Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• Logic Level
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5 mm × 6 mm Plastic Package
2 Applications
• DC-DC Conversion
• Secondary Side Synchronous Rectifier
• Battery Motor Control
Product Summary
T_A = 25°C
V_DS
Drain-to-source voltage
Q_g
Gate charge total (4.5 V)
Q_gd
Gate charge gate-to-drain
R_DS(on) Drain-to-source on-resistance
V_GS(th) Threshold voltage
TYPICAL VALUE
40
13
4.3
V_GS = 4.5 V 4.7
V_GS = 10 V
3.4
1.8
UNIT
V
nC
nC
mΩ
mΩ
V
Ordering Information⁽¹⁾
DEVICE
QTY MEDIA
PACKAGE
CSD18503Q5A 2500 13-Inch Reel _{SON 5 mm × 6 mm}
CSD18503Q5AT 250 7-Inch Reel
Plastic Package
SHIP
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
3 Description
This 40 V, 3.4 mΩ, 5 x 6 mm SON NexFET™ power
MOSFET is designed to minimize losses in power
conversion applications.
Top View
S1
8D
S2
7D
S3
D
G4
Text added for spacing
6D
5D
P0093-01
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-source voltage
V_GS Gate-to-source voltage
Continuous drain current (package limited),
T_C = 25°C
I_D
Continuous drain current (silicon limited), T_C
= 25°C
Continuous drain current, T_A = 25°C⁽¹⁾
I_DM Pulsed drain current, T_A = 25°C⁽²⁾
Power dissipation⁽¹⁾
P_D
Power dissipation, T_C = 25°C
T_J, Operating junction,
T_stg Storage temperature
E_AS
Avalanche energy, single pulse
I_D = 56 A, L = 0.1 mH, R_G = 25 Ω
VALUE
40
±20
100
121
19
321
3.1
120
–55 to 150
157
UNIT
V
V
A
A
W
°C
mJ
(1) Typical R_θJA = 40°C/W on a 1 inch², 2 oz. Cu pad on a 0.06
inch thick FR4 PCB.
(2) Max R_θJC = 1.3°C/W, pulse duration ≤100 μs, duty cycle ≤1%
R_DS(on) vs V_GS
14
T_C = 25°C, I _D = 22 A
12
T_C = 125°C, I _D = 22 A
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
V_GS - Gate-to-Source Voltage (V)
D007
1
10
I_D = 22 A
V_DS = 20 V
8
Gate Charge
6
4
2
0
0
5
10
15
20
25
30
Q_g - Gate Charge (nC)
D004
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.