English
Language : 

CSD18502Q5B_16 Datasheet, PDF (1/15 Pages) Texas Instruments – 40V N-Channel NexFET Power MOSFET
Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
Reference
Design
CSD18502Q5B
SLPS320A – NOVEMBER 2012 – REVISED JULY 2015
CSD18502Q5B 40 V N-Channel NexFET™ Power MOSFET
1 Features
•1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Logic Level
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen-Free
• SON 5 mm × 6 mm Plastic Package
2 Applications
• DC-DC Conversion
• Secondary Side Synchronous Rectifier
• Motor Control
Product Summary
TA = 25°C
VDS
Drain to source voltage
Qg
Gate charge total (4.5 V)
Qgd
Gate charge gate to drain
RDS(on) Drain to source on resistance
VGS(th) Threshold voltage
TYPICAL VALUE
40
25
8.4
VGS = 4.5 V 2.5
VGS = 10 V
1.8
1.8
UNIT
V
nC
nC
mΩ
mΩ
V
DEVICE
CSD18502Q5B
CSD18502Q5BT
Ordering Information(1)
QTY MEDIA
PACKAGE
SHIP
2500 13-Inch Reel SON 5 mm × 6 mm Tape and
250 7-Inch Reel Plastic Package
Reel
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
3 Description
This 40-V, 1.8-mΩ, 5 mm × 6 mm NexFET™ power
MOSFET is designed to minimize losses in power
conversion applications.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0093-01
Absolute Maximum Ratings
TA = 25°C
VDS Drain to source voltage
VGS Gate to source voltage
Continuous drain current (package limited)
VALUE
40
±20
100
UNIT
V
V
ID
Continuous drain current (silicon limited), TC
= 25°C
204
A
Continuous drain current(1)
26
IDM Pulsed drain current(2)
Power dissipation(1)
PD
Power dissipation, TC = 25°C
400
A
3.2
W
156
TJ
Operating junction temperature
–55 to 150 °C
Tstg Storage temperature
–55 to 150 °C
EAS
Avalanche energy, single pulse
ID = 88 A, L = 0.1 mH, RG = 25 Ω
387
mJ
(1) Typical RθJA = 40°C/W on a 1 inch2 , 2 oz. Cu pad on a 0.06
inch thick FR4 PCB.
(2) Max RθJC = 0.8°C/W, pulse duration ≤100 μs, duty cycle ≤1%
RDS(on) vs VGS
8
TC = 25°C, I D = 30 A
7
TC = 125°C, I D = 30 A
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to-Source Voltage (V)
D007
10
ID = 30 A
VDS = 20 V
8
Gate Charge
6
4
2
0
0 5 10 15 20 25 30 35 40 45 50 55
Qg - Gate Charge (nC)
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.