CSD17581Q5A Datasheet, PDF (1/13 Pages) Texas Instruments – V N-Channel NexFET Power MOSFETs

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CSD17581Q5A
SLPS630 – SEPTEMBER 2016
CSD17581Q5A 30-V N-Channel NexFET™ Power MOSFETs
1 Features
•1 Low Q_g and Q_gd
• Low R_DS(on)
• Low Thermal Resistance
• Avalanche Rated
• Lead-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
2 Applications
• Point-of-Load Synchronous Buck Converter for
Applications in Networking, Telecom, and
Computing Systems
• Optimized for Control FET Applications
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (4.5 V)
Q_gd
Gate Charge Gate to Drain
R_DS(on) Drain-to-Source On-Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
30
20
4
V_GS = 4.5 V
3.5
V_GS = 10 V
2.9
1.3
UNIT
V
nC
nC
mΩ
mΩ
V
.
Device Information⁽¹⁾
DEVICE
MEDIA QTY
PACKAGE
CSD17581Q5A 13-Inch Reel 2500
CSD17581Q5AT 7-Inch Reel 250
SON
5.00 × 6.00 mm
Plastic Package
SHIP
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
3 Description
This 30-V, 2.9-mΩ, SON 5-mm × 6-mm NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
Top View
S1
8D
S2
7D
S3
6D
D
G4
5D
P0093-01
.
.
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
Continuous Drain Current (Package Limited)
VALUE
30
±20
60
UNIT
V
V
I_D
Continuous Drain Current (Silicon Limited),
T_C = 25°C
Continuous Drain Current⁽¹⁾
I_DM Pulsed Drain Current⁽²⁾
Power Dissipation⁽¹⁾
P_{D Power Dissipation, TC = 25°C}
T_J, Operating Junction Temperature,
T_stg Storage Temperature
E_AS
Avalanche Energy, Single Pulse
I_D = 39 A, L = 0.1 mH, R_G = 25 Ω
123
A
24
256
A
3.1
W
83
–55 to 150 °C
76
mJ
(1) Typical R_θJA = 40°C/W on a 1-in², 2-oz Cu pad on a
0.06-in thick FR4 PCB.
(2) Max R_θJC = 1.5°C/W, pulse duration ≤100 μs, duty cycle ≤1%
R_DS(on) vs V_GS
10
9
T_C = 25°C, I _D = 16 A
T_C = 125°C, I _D = 16 A
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
V_GS - Gate-to-Source Voltage (V)
D007
1
10
I_D = 16 A
V_DS = 15 V
8
Gate Charge
6
4
2
0
0 5 10 15 20 25 30 35 40 45
Q_g - Gate Charge (nC)
D004
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.