CSD17577Q5A_16 Datasheet, PDF (1/13 Pages) Texas Instruments – 30V N-Channel NexFET Power MOSFET

Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
CSD17577Q5A
SLPS516 – AUGUST 2014
CSD17577Q5A 30-V N-Channel NexFET™ Power MOSFET
1 Features
•1 Low Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5 mm × 6 mm Plastic Package
2 Applications
• Point of Load Synchronous Buck in Networking,
Telecom, and Computing Systems
• Optimized for Control, and Sync FET Applications
3 Description
This 30 V, 3.5 mΩ, SON 5 mm × 6 mm NexFET™
power MOSFET is designed to minimize resistance in
power conversion applications.
Top Icon
S1
8D
S2
7D
S3
D
G4
.
.
6D
5D
P0093-01
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (4.5 V)
Q_gd
Gate Charge Gate-to-Drain
R_DS(on) Drain-to-Source On-Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
30
13
2.8
V_GS = 4.5 V 4.8
V_GS = 10 V
3.5
1.4
UNIT
V
nC
nC
mΩ
mΩ
V
Device
CSD17577Q5A
CSD17577Q5AT
Ordering Information⁽¹⁾
Qty
Media
Package
2500 13-Inch Reel _{SON 5 × 6 mm}
250 7-Inch Reel ^{Plastic Package}
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
30
±20
60
UNIT
V
V
I_D
Continuous Drain Current (Silicon limited),
T_C = 25°C
83
A
Continuous Drain Current ⁽¹⁾
22
I_DM Pulsed Drain Current ⁽²⁾
Power Dissipation⁽¹⁾
P_D
Power Dissipation, T_C = 25°C
280
A
3
W
53
T_J, Operating Junction and
T_stg Storage Temperature Range
–55 to 150 °C
E_AS
Avalanche Energy, single pulse
I_D = 28, L = 0.1 mH, R_G = 25 Ω
39
mJ
(1) Typical R_θJA = 40°C/W on a 1-inch² , 2-oz. Cu pad on a
0.06-inch thick FR4 PCB.
(2) Max R_θJC = 2.8°C/W, pulse duration ≤100 μs, duty cycle ≤1%
R_DS(on) vs V_GS
14
T_C = 25°C,I _D = 16A
12
T_C = 125°C,I _D = 16A
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
V_GS - Gate-to- Source Voltage (V)
G001
Gate Charge
10
9
I_D = 18A
V_DS = 15V
8
7
6
5
4
3
2
1
0
0 3 6 9 12 15 18 21 24 27
Q_g - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.