CSD17573Q5B_16 Datasheet, PDF (1/13 Pages) Texas Instruments – 3 V N-Channel NexFET Power MOSFETs

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CSD17573Q5B
SLPS492A – JUNE 2014 – REVISED FEBRUARY 2015
CSD17573Q5B 30 V N-Channel NexFET™ Power MOSFETs
1 Features
•1 Low Q_g and Q_gd
• Ultra-Low R_DS(on)
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5 mm × 6 mm Plastic Package
2 Applications
• Point-of-Load Synchronous Buck Converter for
Applications in Networking, Telecom, and
Computing Systems
• Optimized for Synchronous FET Applications
3 Description
This 0.84 mΩ, 30 V, SON 5 x 6 NexFET™ power
MOSFET is designed to minimize losses in power
conversion applications.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0093-01
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (4.5 V)
Q_gd
Gate Charge Gate-to-Drain
R_DS(on) Drain-to-Source On-Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
30
49
11.9
V_GS = 4.5 V
V_GS = 10 V
1.4
1.19
0.84
UNIT
V
nC
nC
mΩ
mΩ
V
Device
CSD17573Q5B
CSD17573Q5BT
Ordering Information⁽¹⁾
Qty
Media
Package
2500 13-Inch Reel _{SON 5 x 6 mm}
250 7-Inch Reel ^{Plastic Package}
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
30
±20
100
UNIT
V
V
I_D
Continuous Drain Current (Silicon limited),
T_C = 25°C
332
A
Continuous Drain Current⁽¹⁾
43
I_DM Pulsed Drain Current⁽²⁾
Power Dissipation⁽¹⁾
P_D
Power Dissipation, T_C = 25°C
400
A
3.2
W
195
T_J, Operating Junction and
T_stg Storage Temperature Range
–55 to 150 °C
E_AS
Avalanche Energy, single pulse
I_D = 76, L = 0.1 mH, R_G = 25 Ω
289
mJ
(1) Typical R_θJA = 40°C/W on a 1 inch², 2 oz. Cu pad on a
0.06 inch thick FR4 PCB.
(2) Max R_θJC = 0.8°C/W, pulse duration ≤100 μs, duty cycle ≤1%
R_DS(on) vs V_GS
5
4.5
T_C = 25°C,I _D = 35A
T_C = 125°C,I _D = 35A
4
3.5
3
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 12 14 16 18 20
V_GS - Gate-to- Source Voltage (V)
G001
Gate Charge
10
9
8
7
6
5
4
3
2
1
0
0
I_D = 35A
V_DS = 15V
10 20 30 40 50 60 70 80 90 100 110 120
Q_g - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.