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CSD17571Q2 Datasheet, PDF (1/11 Pages) Texas Instruments – 30V N-Channel NexFET Power MOSFETs
CSD17571Q2
www.ti.com
30V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17571Q2
SLPS393 – OCTOBER 2013
FEATURES
1
•2 Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 2-mm × 2-mm Plastic Package
APPLICATIONS
• Optimized for Load Switch Applications
• Storage, Tablets, and Handheld Devices
• Optimized for Control FET Applications
DESCRIPTION
This 30V, 20mΩ, Son2x2 NexFET™ power MOSFET
has been designed to minimize losses in power
conversion and load management applications, while
offering excellent thermal performance for the size of
the package.
Top View
D1
D
D2
6D
5D
VDS
Qg
Qgd
RDS(on)
VGS(th)
PRODUCT SUMMARY
Drain to Source Voltage
30
Gate Charge Total (4.5 V)
2.4
Gate Charge Gate to Drain
0.6
Drain to Source On Resistance
Threshold Voltage
VGS = 4.5 V
VGS = 10 V
1.6
V
nC
nC
24 mΩ
20 mΩ
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD17571Q2
SON 2-mm × 2-mm
Plastic Package
7-Inch
Reel
3000
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Continuous Drain Current (Package Limit)
ID
Continuous Drain Current(1)
IDM Pulsed Drain Current, TA = 25°C(2)
PD
Power Dissipation(1)
TJ, Operating Junction and Storage
TSTG Temperature Range
EAS
Avalanche Energy, single pulse
ID = 12 A, L = 0.1 mH, RG = 25 Ω
VALUE
30
±20
22
7.6
39
2.5
–55 to 150
7.2
(1) RθJA = 50 on 1in² Cu (2 oz.) on .060" thick FR4 PCB
(2) Pulse duration 10 μs, duty cycle ≤2%
UNIT
V
V
A
A
A
W
°C
mJ
50
46
42
38
34
30
26
22
18
14
10
0
G3
S
4S
P0108-01
RDS(on) vs VGS
TC = 25°C,I D = 5A
TC = 125°C,I D = 5A
2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage (V)
G001
10
9
ID = 5A
VDS =15V
8
GATE CHARGE
7
6
5
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Qg - Gate Charge (nC)
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated
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