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CSD17556Q5B_16 Datasheet, PDF (1/13 Pages) Texas Instruments – 30 V N-Channel NexFET Power MOSFET
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CSD17556Q5B
SLPS392B – MARCH 2013 – REVISED OCTOBER 2014
CSD17556Q5B 30 V N-Channel NexFET™ Power MOSFET
1 Features
•1 Extremely Low Resistance
• Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5 mm × 6 mm Plastic Package
2 Applications
• Point of Load Synchronous Buck in Networking,
Telecom, and Computing Systems
• Synchronous Rectification
• Active ORing and Hotswap Applications
3 Description
This 30 V, 1.2 mΩ, 5 × 6 mm NexFET™ power
MOSFET is designed to minimize losses in
synchronous rectification and other power conversion
applications.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0093-01
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (4.5 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
30
30
7.5
VGS = 4.5 V 1.5
VGS = 10 V
1.2
1.4
UNIT
V
nC
nC
mΩ
mΩ
V
Device
CSD17576Q5B
CSD17576Q5BT
Ordering Information(1)
Qty
Media
Package
2500 13-Inch Reel SON 5 × 6 mm
250 13-Inch Reel Plastic Package
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
ID
Continuous Drain Current (Silicon limited),
TC = 25°C
Continuous Drain Current(1)
IDM Pulsed Drain Current, TA = 25°C(1)(2)
Power Dissipation(1)
PD
Power Dissipation, TC = 25°C
TJ, Operating Junction and
Tstg Storage Temperature Range
EAS
Avalanche Energy, single pulse
ID = 100 A, L = 0.1 mH, RG = 25 Ω
VALUE
30
±20
100
215
34
400
3.1
191
–55 to 150
500
UNIT
V
V
A
A
A
W
°C
mJ
(1) Typical RθJA = 40°C/W on 1-inch2 (6.45-cm2), 2-oz.
(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4
PCB
(2) Max RθJC = 1.3°C/W, Pulse duration ≤100 μs, duty cycle ≤1%
RDS(on) vs VGS
6
TC = 25°C Id = 30A
5
TC = 125ºC Id = 30A
4
3
2
1
Gate Charge
10
ID = 30A
VDS =15V
8
6
4
2
0
0
2
4
6
8
10
12
VGS - Gate-to- Source Voltage (V)
G001
0
0
10
20
30
40
50
60
70
Qg - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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