English
Language : 

CSD17553Q5A Datasheet, PDF (1/9 Pages) Texas Instruments – 30V, N-Channel NexFET™ Power MOSFETs
CSD17553Q5A
www.ti.com
30V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17553Q5A
SLPS373 – MAY 2012
FEATURES
1
• Ultralow Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
APPLICATIONS
• Point of load Synchronous Buck in
Networking, Telecom and Computing Systems
• Optimized for Control and Synchronous FET
Applications
DESCRIPTION
The NexFET power MOSFET has been designed to
minimize losses in power conversion applications.
Top View
S1
8D
S2
7D
S3
G4
12
10
6D
D
5D
P0093-01
Text 4 Spacing
RDS(on) vs VGS
TC = 25°C Id = 20A
TC = 125ºC Id = 20A
PRODUCT SUMMARY
VDS
Drain to Source Voltage
30
V
Qg
Gate Charge Total (4.5V)
17.5
nC
Qgd
Gate Charge Gate to Drain
4.7
nC
RDS(on) Drain to Source On Resistance
VGS = 4.5V
VGS = 10V
3.5 mΩ
2.7 mΩ
VGS(th) Threshold Voltage
1.5
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD17553Q5A
SON 5-mm × 6-mm
Plastic Package
13-Inch
Reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Continuous Drain Current, TC = 25°C
Continuous Drain Current, TA = 25°C(1)
IDM Pulsed Drain Current, TA = 25°C(2)
PD
Power Dissipation(1)
TJ, Operating Junction and Storage
TSTG Temperature Range
EAS
Avalanche Energy, Single Pulse
ID = 45A, L = 0.1mH, RG = 25Ω
VALUE
30
+/-20
100
23.5
151
3.1
UNIT
V
V
A
A
A
W
–55 to 150 °C
101
mJ
(1) Typical RθJA = 40.5°C/W on a 1-inch2 (6.45-cm2),
2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick
FR4 PCB.
(2) Pulse duration ≤300μs, duty cycle ≤2%
10
ID = 20A
VDS = 15V
8
Text 4 Spacing
GATE CHARGE
8
6
6
4
4
2
2
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage - V
G001
0
0
5 10 15 20 25 30 35 40
Qg - Gate Charge - nC (nC)
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2012, Texas Instruments Incorporated