CSD17551Q3A_16 Datasheet, PDF (1/13 Pages) Texas Instruments – N-Channel NexFET Power MOSFETs

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CSD17551Q3A
SLPS386B – SEPTEMBER 2012 – REVISED JANUARY 2016
CSD17551Q3A 30-V N-Channel NexFET™ Power MOSFETs
1 Features
•1 Ultra-Low Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free
• RoHS Compliant
• Halogen Free
• SON 3.3 mm × 3.3 mm Plastic Package
2 Applications
• Point-of-Load Synchronous Buck in Networking,
Telecom, and Computing Systems
• Optimized for Control FET Applications
3 Description
This 30 V, 7.8 mΩ, 3.3 mm × 3.3 mm NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
Top View
S1
8D
S2
7D
S3
D
G4
SPACE
SPACE
6D
5D
P0093-01
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (4.5 V)
Q_gd
Gate Charge Gate-to-Drain
R_DS(on) Drain-to-Source On Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
30
6.0
1.5
V_GS = 4.5 V 9.6
V_GS = 10 V
7.8
1.6
UNIT
V
nC
nC
mΩ
mΩ
V
DEVICE
CSD17551Q3A
CSD17551Q3AT
Ordering Information⁽¹⁾
QTY MEDIA
PACKAGE
2500 13-Inch Reel
SON
3.3 mm × 3.3 mm
250 7-Inch Reel _{Plastic Package}
SHIP
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C unless otherwise stated
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
Continuous Drain Current, T_C = 25°C
I_D
Continuous Drain Current, Silicon Limited
Continuous Drain Current, T_A = 25°C⁽¹⁾
I_DM Pulsed Drain Current, T_A = 25°C⁽²⁾
P_D
Power Dissipation⁽¹⁾
T_J, Operating Junction Temperature,
T_stg Storage Temperature
E_AS
Avalanche Energy, single pulse
I_D = 25 A, L = 0.1 mH, R_G = 25 Ω
VALUE
30
±20
48
48
12
71
2.6
UNIT
V
V
A
A
A
A
W
–55 to 150 °C
31
mJ
(1) Typical R_θJA = 48°C/W on a 1 inch² (6.45 cm²),
2 oz. (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick
FR4 PCB.
(2) Pulse duration ≤300 μs, duty cycle ≤2%
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
R_DS(on) vs V_GS
T_C = 25°C Id = 11A
T_C = 125ºC Id = 11A
2
4
6
8
10
12
V_GS - Gate-to- Source Voltage (V)
G001
Gate Charge
10
I_D = 11A
V_DS =15V
8
6
4
2
0
0
3
6
9
12
15
Q_g - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.