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CSD17522Q5A Datasheet, PDF (1/9 Pages) Texas Instruments – 30V, N-Channel NexFET Power MOSFETs
CSD17522Q5A
www.ti.com
30V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17522Q5A
SLPS341 – JUNE 2011
FEATURES
1
•2 Optimized for 5V Gate Drive
• Ultralow Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
APPLICATIONS
• Notebook Point of Load
• Point-of-Load Synchronous Buck in
Networking, Telecom and Computing Systems
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications,
and optimized for 5V gate drive applications.
Figure 1. Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
VDS
Qg
Qgd
RDS(on)
VGS(th)
PRODUCT SUMMARY
Drain to Source Voltage
30
Gate Charge Total (4.5V)
3.6
Gate Charge Gate to Drain
1.1
Drain to Source On Resistance
Threshold Voltage
VGS = 4.5V
VGS = 10V
1.6
V
nC
nC
10 mΩ
6.7 mΩ
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD17522Q5A
SON 5-mm × 6-mm
Plastic Package
13-Inch
Reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Continuous Drain Current, TC = 25°C
Continuous Drain Current(1)
IDM Pulsed Drain Current, TA = 25°C(2)
PD
Power Dissipation(1)
TJ, Operating Junction and Storage
TSTG Temperature Range
EAS
Avalanche Energy, single pulse
ID = 33A, L = 0.1mH, RG = 25Ω
VALUE
30
+20 / –12
87
16
104
3
UNIT
V
V
A
A
A
W
–55 to 150 °C
54
mJ
(1) Typical RθJA = 41°C/W on a 1-inch2 (6.45-cm2),
2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick
FR4 PCB.
(2) Pulse duration ≤300μs, duty cycle ≤2%
P0093-01
RDS(on) vs VGS
30
ID = 14A
25
20
15
10
5
TC = 25°C
TC = 125ºC
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage - V
GATE CHARGE
20
18
ID = 14A
VDD = 15V
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
Qg - Gate Charge - nC (nC)
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011, Texas Instruments Incorporated
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