CSD17506Q5A Datasheet, PDF (1/9 Pages) Texas Instruments – 30V, N-Channel NexFET™ Power MOSFETs

CSD17506Q5A
www.ti.com
30V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17506Q5A
SLPS304 – DECEMBER 2010
FEATURES
1
•2 Ultralow Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
APPLICATIONS
• Point-of-Load Synchronous Buck in
Networking, Telecom, and Computing Systems
• Synchronous or Control FET Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications.
Top View
S1
8D
S2
7D
S3
6D
D
G4
5D
P0093-01
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
R_DS(on) vs V_GS
16
I_D = 20A
14
12
10
8
6
4
2
T_C = 25°C
T_C = 125ºC
0
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to- Source Voltage - V
PRODUCT SUMMARY
T_A = 25°C unless otherwise stated
V_DS
Drain to Source Voltage
Q_g
Gate Charge Total (4.5V)
Q_gd
Gate Charge Gate to Drain
R_DS(on) Drain to Source On Resistance
V_GS(th)
Threshold Voltage
TYPICAL VALUE
30
8.3
2.3
V_GS = 4.5V
4.2
V_GS = 10V
3.2
1.3
UNIT
V
nC
nC
mΩ
mΩ
V
Text Added For Spacing
ORDERING INFORMATION
Device
Package
Media Qty
CSD17506Q5A
SON 5-mm × 6-mm
Plastic Package
13-Inch
Reel
2500
Ship
Tape and
Reel
Text Added For Spacing
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
VALUE UNIT
V_DS Drain to Source Voltage
30
V
V_GS Gate to Source Voltage
+20 / –12 V
I_D
Continuous Drain Current, T_C = 25°C
Continuous Drain Current⁽¹⁾
100
A
23
A
I_DM Pulsed Drain Current, T_A = 25°C⁽²⁾
P_D
Power Dissipation⁽¹⁾
150
A
3.2
W
T_J,
T_STG
Operating Junction and Storage Temperature
Range
–55 to 150
°C
E_AS
Avalanche Energy, single pulse
I_D = 72A, L = 0.1mH, R_G = 25Ω
259
mJ
(1) Typical R_qJA = 39°C/W on a 1-inch² (6.45-cm²), 2-oz. (0.071-
mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤300ms, duty cycle ≤2%
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
GATE CHARGE
10
9
I_D = 20A
V_DD = 15V
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18
Q_g - Gate Charge - nC (nC)
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010, Texas Instruments Incorporated