CSD17483F4_13 Datasheet, PDF (1/12 Pages) Texas Instruments – 30 V, N-Channel FemtoFET MOSFET

CSD17483F4
www.ti.com
SLPS447A – JULY 2013 – REVISED NOVEMBER 2013
30 V, N-Channel FemtoFET™ MOSFET
Check for Samples: CSD17483F4
FEATURES
1
•2 Low On Resistance
• Low Q_g and Q_gd
• Low Threshold Voltage
• Ultra-Small Footprint (0402 Case Size)
– 1.0 mm x 0.6 mm
• Ultra-Low Profile
– 0.35 mm Height
• Integrated ESD Protection Diode
– Rated > 4 kV HBM
– Rated > 2 kV CDM
• Pb and Halogen Free
• RoHS Compliant
PRODUCT SUMMARY
V_DS
Drain-to-Source Voltage
30
V
Q_g
Gate Charge Total (4.5 V)
1010
pC
Q_gd
Gate Charge Gate to Drain
130
pC
V_GS = 1.8 V
370
R_DS(on) Drain-to-Source On Resistance V_GS = 2.5 V
240 mΩ
V_GS = 4.5 V
200
V_GS(th) Threshold Voltage
0.85
V
Text Added For Spacing
ORDERING INFORMATION
Device
Qty Media
Package
Ship
CSD17483F4 3000
CSD17483F4T 250
7-Inch
Reel
7-Inch
Reel
Femto(0402) 1.0 mm x Tape and
0.6 mm SMD Lead Less Reel
APPLICATIONS
• Optimized for Load Switch Applications
• Optimized for General Purpose Switching
Applications
• Single-Cell Battery Applications
• Handheld and Mobile Applications
DESCRIPTION
The FemtoFET™ MOSFET technology has been
designed and optimized to minimize the footprint in
many handheld and mobile applications. This
technology is capable of replacing standard small
signal MOSFETs while providing at least a 60%
reduction in footprint size.
.
Typical Part Dimensions
Text Added For Spacing
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
I_D
Continuous Drain Current, T_A = 25°C⁽¹⁾
I_DM
Pulsed Drain Current, T_A = 25°C⁽²⁾
P_D
Power Dissipation⁽¹⁾
ESD ^{Human Body Model (HBM)}
Rating _{Charged Device Model (CDM)}
VALUE
30
12
1.5
5
500
4
2
UNIT
V
V
A
A
mW
kV
kV
T_J,
Operating Junction and Storage
T_STG Temperature Range
–55 to 150 °C
E_AS
Avalanche Energy, single pulse I_D = 7.4 A,
L = 0.1 mH, R_G = 25 Ω
2.7
mJ
(1) Typical R_θJA = 90°C/W on 1-inch² (6.45-cm²), 2-oz. (0.071-
mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤300 μs, duty cycle ≤2%
Top View
0.35 ^mm
D
0.60 _mm
1.00 ^mm
GS
.
.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
FemtoFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated